Tayar Galante Miguel, Živković Aleksandar, Alvim Jéssica Costa, Calchi Kleiner Cinthia Cristina, Sangali Márcio, Taylor S F Rebecca, Greer Adam J, Hardacre Christopher, Rajeshwar Krishnan, Caram Rubens, Bertazzoli Rodnei, Macaluso Robin T, de Leeuw Nora H, Longo Claudia
Institute of Chemistry, University of Campinas-UNICAMP, 13083-970 Campinas, Brazil.
Center for Innovation on New Energies, University of Campinas, CEP 13083-841 Campinas, Brazil.
ACS Appl Mater Interfaces. 2021 Jul 21;13(28):32865-32875. doi: 10.1021/acsami.1c03928. Epub 2021 Jul 12.
A little-studied p-type ternary oxide semiconductor, copper(I) tungstate (CuWO), was assessed by a combined theoretical/experimental approach. A detailed computational study was performed to solve the long-standing debate on the space group of CuWO, which was determined to be triclinic 1. CuWO was synthesized by a time-efficient, arc-melting method, and the crystalline reddish particulate product showed broad-band absorption in the UV-visible spectral region, thermal stability up to ∼260 °C, and cathodic photoelectrochemical activity. Controlled thermal oxidation of copper from the Cu(I) to Cu(II) oxidation state showed that the crystal lattice could accommodate Cu cations up to ∼260 °C, beyond which the compound was converted to CuO and CuWO. This process was monitored by powder X-ray diffraction and X-ray photoelectron spectroscopy. The electronic band structure of CuWO was contrasted with that of the Cu(II) counterpart, CuWO using spin-polarized density functional theory (DFT). Finally, the compound CuWO was determined to have a high-lying (negative potential) conduction band edge underlining its promise for driving energetic photoredox reactions.
一种研究较少的p型三元氧化物半导体——钨酸铜(I)(CuWO),通过理论与实验相结合的方法进行了评估。进行了详细的计算研究,以解决关于CuWO空间群的长期争论,确定其为三斜晶系1。CuWO通过一种省时的电弧熔炼法合成,结晶的微红颗粒产物在紫外-可见光谱区域表现出宽带吸收,热稳定性高达约260°C,以及阴极光电化学活性。将铜从Cu(I)氧化态控制热氧化为Cu(II)氧化态表明,晶格在高达约260°C时可容纳铜阳离子,超过该温度后,化合物转变为CuO和CuWO。通过粉末X射线衍射和X射线光电子能谱对该过程进行了监测。利用自旋极化密度泛函理论(DFT),将CuWO的电子能带结构与Cu(II)对应物CuWO的能带结构进行了对比。最后,确定化合物CuWO具有较高(负电位)的导带边缘,这突出了其驱动高能光氧化还原反应的潜力。