Yuan Zi-Lin, Sun Yu, Wang Dan, Chen Ke-Qiu, Tang Li-Ming
Department of Applied Physics, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China.
College of Science, Central South University of Forestry and Technology, Changsha 410004, People's Republic of China.
J Phys Condens Matter. 2021 Jul 30;33(40). doi: 10.1088/1361-648X/ac145c.
Ultrathin ferroelectrics are of great technological interest for high-density electronics, particularly non-volatile memories and field-effect transistors. With the rapid development of micro-electronics technology, there is an urgent requirement for higher density electronic devices, which need ultra-thin ferroelectric materials films. However, as ferroelectric films have becomes thinner and thinner, electrical spontaneous polarization signals have been found in a few atomic layers or even monolayer structures. The mechanisms of detection and formation of these signals are not well understood and various controversial interpretations have emerged. In this review, we summarized the recent research progress in the ultra-thin film ferroelectric material, such as HfO, CuInPS, InSe, MoTeand BaTiO. Various key aspects of ferroelectric materials are discussed, including crystal structure, ferroelectric mechanism, characterization, fabrication methods, applications, and future outlooks. We hope this review will offer ideas for further improvement of ferroelectric properties of ultra-thin films and promotes practical applications.
超薄铁电体对于高密度电子学，特别是非易失性存储器和场效应晶体管具有重大的技术意义。随着微电子技术的快速发展，对更高密度电子器件的需求迫切，这需要超薄铁电材料薄膜。然而，随着铁电薄膜变得越来越薄，在少数原子层甚至单层结构中都发现了电自发极化信号。这些信号的检测和形成机制尚未得到很好的理解，出现了各种有争议的解释。在这篇综述中，我们总结了超薄薄膜铁电材料（如HfO、CuInPS、InSe、MoTe和BaTiO）的最新研究进展。讨论了铁电材料的各个关键方面，包括晶体结构、铁电机制、表征、制备方法、应用和未来展望。我们希望这篇综述能为进一步改善超薄薄膜的铁电性能提供思路，并推动其实际应用。
