Jia Tingting, Yang Liu, Zhang Juncheng, Kimura Hideo, Zhao Hongyang, Guo Quansheng, Cheng Zhenxiang
School of Materials Science and Engineering, Hubei University, Wuhan 430062, China.
Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China.
Nanomaterials (Basel). 2023 Sep 5;13(18):2504. doi: 10.3390/nano13182504.
BiSe, one of the most extensively studied topological insulators, has received significant attention, and abundant research has been dedicated to exploring its surface electronic properties. However, little attention has been given to its piezoelectric properties. Herein, we investigate the piezoelectric response in a five-layer BiSe nanosheet using scanning probe microscopy (SPM) techniques. The piezoelectricity of BiSe is characterized using both conventional piezoresponse force microscopy (PFM) and a sequential excitation scanning probe microscopy (SE-SPM) technique. To confirm the linear piezoelectricity of BiSe two-dimensional materials, measurements of point-wise linear and quadratic electromechanical responses are carried out. Furthermore, the presence of polarization and relaxation is confirmed through hysteresis loops. As expected, the BiSe nanosheet exhibits an electromechanical solid response. Due to the inevitable loss of translational symmetry at the crystal edge, the lattice of the odd-layer BiSe nanosheet is noncentrosymmetric, indicating its potential for linear piezoelectricity. This research holds promise for nanoelectromechanical systems (NEMS) applications and future nanogenerators.
BiSe作为研究最为广泛的拓扑绝缘体之一,受到了广泛关注,大量研究致力于探索其表面电子特性。然而,其压电特性却很少受到关注。在此,我们使用扫描探针显微镜(SPM)技术研究了五层BiSe纳米片中的压电响应。BiSe的压电性通过传统的压电响应力显微镜(PFM)和顺序激发扫描探针显微镜(SE-SPM)技术进行表征。为了确认BiSe二维材料的线性压电性,进行了逐点线性和二次机电响应的测量。此外,通过滞后回线证实了极化和弛豫的存在。正如预期的那样,BiSe纳米片表现出机电固体响应。由于晶体边缘不可避免地失去平移对称性,奇数层BiSe纳米片的晶格是非中心对称的,这表明其具有线性压电性的潜力。这项研究有望应用于纳米机电系统(NEMS)和未来的纳米发电机。