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外延SrRuO(111)薄膜中磁性外尔费米子的电场控制

Electric Field Control of the Magnetic Weyl Fermion in an Epitaxial SrRuO (111) Thin Film.

作者信息

Lin Weinan, Liu Liang, Liu Qing, Li Lei, Shu Xinyu, Li Changjian, Xie Qidong, Jiang Peiheng, Zheng Xuan, Guo Rui, Lim Zhishiuh, Zeng Shengwei, Zhou Guowei, Wang Han, Zhou Jing, Yang Ping, Pennycook Stephen J, Xu Xiaohong, Zhong Zhicheng, Wang Zhiming, Chen Jingsheng

机构信息

Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore.

Key Laboratory of Magnetic Materials and Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China.

出版信息

Adv Mater. 2021 Sep;33(36):e2101316. doi: 10.1002/adma.202101316. Epub 2021 Jul 24.

Abstract

The magnetic Weyl fermion originates from the time reversal symmetry (TRS)-breaking in magnetic crystalline structures, where the topology and magnetism entangle with each other. Therefore, the magnetic Weyl fermion is expected to be effectively tuned by the magnetic field and electrical field, which holds promise for future topologically protected electronics. However, the electrical field control of the magnetic Weyl fermion has rarely been reported, which is prevented by the limited number of identified magnetic Weyl solids. Here, the electric field control of the magnetic Weyl fermion is demonstrated in an epitaxial SrRuO (111) thin film. The magnetic Weyl fermion in the SrRuO films is indicated by the chiral anomaly induced magnetotransport, and is verified by the observed Weyl nodes in the electronic structures characterized by the angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations. Through the ionic-liquid gating experiment, the effective manipulation of the Weyl fermion by electric field is demonstrated, in terms of the sign-change of the ordinary Hall effect, the nonmonotonic tuning of the anomalous Hall effect, and the observation of the linear magnetoresistance under proper gating voltages. The work may stimulate the searching and tuning of Weyl fermions in other magnetic materials, which are promising in energy-efficient electronics.

摘要

磁性外尔费米子起源于磁性晶体结构中的时间反演对称性(TRS)破缺,其中拓扑结构和磁性相互纠缠。因此,预计磁性外尔费米子可通过磁场和电场进行有效调控,这为未来的拓扑保护电子学带来了希望。然而,关于磁性外尔费米子的电场调控鲜有报道,这是由于已确定的磁性外尔固体数量有限所致。在此,在外延生长的SrRuO(111)薄膜中展示了对磁性外尔费米子的电场调控。SrRuO薄膜中的磁性外尔费米子通过手征反常诱导的磁输运得以表明,并通过角分辨光电子能谱(ARPES)和第一性原理计算表征的电子结构中观测到的外尔节点得到验证。通过离子液体门控实验,从常规霍尔效应的符号变化、反常霍尔效应的非单调调控以及在适当门控电压下观测到的线性磁电阻等方面,展示了电场对外尔费米子的有效操控。这项工作可能会激发在其他磁性材料中寻找和调控外尔费米子,这些材料在节能电子学方面颇具前景。

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