• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

借助六方密堆积晶体的分子动力学模拟分析C面蓝宝石的纳米划痕机制

Analysis of Nanoscratch Mechanism of C-Plane Sapphire with the Aid of Molecular Dynamics Simulation of Hcp Crystal.

作者信息

Lin Wangpiao, Yano Naohiko, Shimizu Jun, Zhou Libo, Onuki Teppei, Ojima Hirotaka

机构信息

Graduate School of Science and Engineering, Ibaraki University, 4-12-1 Nakanarusawa-cho, Hitachi-shi, Ibaraki 316-8511, Japan.

Department of Mechanical Systems Engineering, Ibaraki University, 4-12-1 Nakanarusawa-cho, Hitachi-shi, Ibaraki 316-8511, Japan.

出版信息

Nanomaterials (Basel). 2021 Jul 1;11(7):1739. doi: 10.3390/nano11071739.

DOI:10.3390/nano11071739
PMID:34361124
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8308124/
Abstract

In this study, single groove nanoscratch experiments using a friction force microscope (FFM) with a monocrystalline diamond tip were conducted on a c-plane sapphire wafer to analyze the ductile-regime removal and deformation mechanism including the anisotropy. Various characteristics, such as scratch force, depth, and specific energy for each representative scratch direction on the c-plane of sapphire, were manifested by the FFM, and the results of the specific scratch energy showed a trend of six-fold symmetry on taking lower values than those of the other scratch directions when the scratch directions correspond to the basal slip directions as 0001⟨112¯0⟩. Since this can be due to the effect of most probably basal slip or less probably basal twinning on the c-plane, a molecular dynamics (MD) simulation of zinc, which is one of the hexagonal close-packed (hcp) crystals with similar slip/twining systems, was attempted to clarify the phenomena. The comparison results between the nanoscratch experiment and the MD simulation revealed that both the specific scratch energy and the burr height were minimized when scratched in the direction of the basal slip. Therefore, it was found that both the machining efficiency and the accuracy could be improved by scratching in the direction of the basal slip in the single groove nanoscratch of c-plane sapphire.

摘要

在本研究中,使用带有单晶金刚石尖端的摩擦力显微镜(FFM)在c面蓝宝石晶片上进行了单槽纳米划痕实验,以分析包括各向异性在内的延性区域去除和变形机制。FFM显示了蓝宝石c面上每个代表性划痕方向的各种特性,如划痕力、深度和比能,并且当划痕方向对应于基面滑移方向为0001⟨112¯0⟩时,比划痕能的结果呈现出六重对称趋势,其值低于其他划痕方向。由于这很可能是由于基面滑移或不太可能的基面孪晶在c面上的作用,因此尝试对锌进行分子动力学(MD)模拟,锌是具有相似滑移/孪晶系统的六方密堆积(hcp)晶体之一,以阐明该现象。纳米划痕实验和MD模拟之间的比较结果表明,当沿基面滑移方向划痕时,比划痕能和毛刺高度均最小。因此,发现在c面蓝宝石的单槽纳米划痕中沿基面滑移方向划痕可以提高加工效率和精度。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bae6/8308124/e244e276eb21/nanomaterials-11-01739-g013.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bae6/8308124/da6ec188e327/nanomaterials-11-01739-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bae6/8308124/d2fe94a74366/nanomaterials-11-01739-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bae6/8308124/e6713b5f765b/nanomaterials-11-01739-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bae6/8308124/837765ca40dd/nanomaterials-11-01739-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bae6/8308124/5815f52c4ce1/nanomaterials-11-01739-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bae6/8308124/ba6ef8db02b5/nanomaterials-11-01739-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bae6/8308124/fa6b16a9274b/nanomaterials-11-01739-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bae6/8308124/e3a10ec2823b/nanomaterials-11-01739-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bae6/8308124/617644097f97/nanomaterials-11-01739-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bae6/8308124/078f1eaa6c99/nanomaterials-11-01739-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bae6/8308124/86083a47d7f3/nanomaterials-11-01739-g011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bae6/8308124/aae127ab7d7e/nanomaterials-11-01739-g012.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bae6/8308124/e244e276eb21/nanomaterials-11-01739-g013.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bae6/8308124/da6ec188e327/nanomaterials-11-01739-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bae6/8308124/d2fe94a74366/nanomaterials-11-01739-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bae6/8308124/e6713b5f765b/nanomaterials-11-01739-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bae6/8308124/837765ca40dd/nanomaterials-11-01739-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bae6/8308124/5815f52c4ce1/nanomaterials-11-01739-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bae6/8308124/ba6ef8db02b5/nanomaterials-11-01739-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bae6/8308124/fa6b16a9274b/nanomaterials-11-01739-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bae6/8308124/e3a10ec2823b/nanomaterials-11-01739-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bae6/8308124/617644097f97/nanomaterials-11-01739-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bae6/8308124/078f1eaa6c99/nanomaterials-11-01739-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bae6/8308124/86083a47d7f3/nanomaterials-11-01739-g011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bae6/8308124/aae127ab7d7e/nanomaterials-11-01739-g012.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bae6/8308124/e244e276eb21/nanomaterials-11-01739-g013.jpg

相似文献

1
Analysis of Nanoscratch Mechanism of C-Plane Sapphire with the Aid of Molecular Dynamics Simulation of Hcp Crystal.借助六方密堆积晶体的分子动力学模拟分析C面蓝宝石的纳米划痕机制
Nanomaterials (Basel). 2021 Jul 1;11(7):1739. doi: 10.3390/nano11071739.
2
Anisotropy Dependence of Material Deformation Mechanisms in Nanoscratching Monocrystalline BaF: Experiments and Atomic Simulations.纳米划痕单晶BaF中材料变形机制的各向异性依赖性:实验与原子模拟
ACS Appl Mater Interfaces. 2024 Jul 17;16(28):37234-37247. doi: 10.1021/acsami.4c06167. Epub 2024 Jul 5.
3
Investigation of nanoscratch processes in semiconductor materials for application to maskless patterning.用于无掩膜光刻的半导体材料纳米划痕工艺研究。
J Nanosci Nanotechnol. 2008 Jun;8(6):3020-9. doi: 10.1166/jnn.2008.148.
4
Nanoscratch Characterization of GaN Epilayers on c- and a-Axis Sapphire Substrates.在c轴和a轴蓝宝石衬底上生长的氮化镓外延层的纳米划痕表征
Nanoscale Res Lett. 2010 Aug 7;5(11):1812-1816. doi: 10.1007/s11671-010-9717-8.
5
The study of nanoscratch and nanomachining on hard multilayer thin films using atomic force microscope.使用原子力显微镜对硬质多层薄膜进行纳米划痕和纳米加工的研究。
Scanning. 2012 Jan-Feb;34(1):51-9. doi: 10.1002/sca.20280. Epub 2011 Aug 24.
6
Investigation of the Anisotropy of 4H-SiC Materials in Nanoindentation and Scratch Experiments.4H-SiC材料在纳米压痕和划痕实验中的各向异性研究
Materials (Basel). 2022 Mar 28;15(7):2496. doi: 10.3390/ma15072496.
7
The study on the nanomachining property and cutting model of single-crystal sapphire by atomic force microscopy.基于原子力显微镜的蓝宝石单晶纳米加工特性及切削模型研究
Scanning. 2014 Nov-Dec;36(6):599-607. doi: 10.1002/sca.21160. Epub 2014 Sep 19.
8
The Plastic Deformation Mechanisms of hcp Single Crystals with Different Orientations: Molecular Dynamics Simulations.不同取向hcp单晶的塑性变形机制:分子动力学模拟
Materials (Basel). 2021 Feb 4;14(4):733. doi: 10.3390/ma14040733.
9
Molecular dynamics on interface and nanoscratch mechanisms of alkanethiol self-assembled monolayers.烷硫醇自组装单分子层的界面分子动力学和纳米划痕机制。
J Phys Chem B. 2009 Nov 12;113(45):14994-5001. doi: 10.1021/jp905389w.
10
Mechanism and energetics of 〈c + a〉 dislocation cross-slip in hcp metals.六方密排金属中〈c + a〉位错交滑移的机制与能量学
Proc Natl Acad Sci U S A. 2016 Oct 4;113(40):11137-11142. doi: 10.1073/pnas.1603966113. Epub 2016 Sep 19.

本文引用的文献

1
Empirical interatomic potential for carbon, with application to amorphous carbon.碳的经验性原子间势及其在非晶碳中的应用。
Phys Rev Lett. 1988 Dec 19;61(25):2879-2882. doi: 10.1103/PhysRevLett.61.2879.