Shi Suhua, Yu Yiqing, Wang Ningchang, Zhang Yong, Shi Weibin, Liao Xinjiang, Duan Nian
College of Mechanical Engineering and Automation, National Huaqiao University, Xiamen 361021, China.
Zhengzhou Research Institute for Abrasives & Grinding Co., Ltd., Zhengzhou 450001, China.
Materials (Basel). 2022 Mar 28;15(7):2496. doi: 10.3390/ma15072496.
Silicon carbide is an ideal material for advanced electronics, military, and aerospace applications due to its superior physical and chemical properties. In order to understand the effect of crystal anisotropy of 4H-SiC on its processability, nanoindentation and nanoscratch tests on various crystallographic planes and orientations were performed and the results outlined in this paper. The results show that the C-plane of 4H-SiC is more rigid, while the Si-plane is more elastic and ductile. Better surface quality may be obtained on the Si-plane in nanoscale abrasive machining. The maximum lateral force, maximum residual depth of the scratch, and maximum crack width on the C- and Si-planes of 4H-SiC are significantly periodic in crystallographic orientations at 30° intervals. The scratch along the <112¯0> direction is more prone to crack expansion, and better machined surface quality is easy to obtain along the <101¯0> directions of C- and Si-planes.
由于其优异的物理和化学性能，碳化硅是先进电子、军事和航空航天应用的理想材料。为了了解4H-SiC晶体各向异性对其加工性能的影响，对不同晶面和晶向进行了纳米压痕和纳米划痕试验，并在本文中概述了结果。结果表明，4H-SiC的C面更硬，而Si面更具弹性和韧性。在纳米级磨削加工中，Si面上可能获得更好的表面质量。4H-SiC的C面和Si面上的最大侧向力、划痕最大残余深度和最大裂纹宽度在30°间隔的晶体取向中具有明显的周期性。沿<112¯0>方向的划痕更容易产生裂纹扩展，沿C面和Si面的<101¯0>方向更容易获得更好的加工表面质量。
