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电子弗洛凯陀螺液晶

Electronic Floquet gyro-liquid crystal.

作者信息

Esin Iliya, Gupta Gaurav Kumar, Berg Erez, Rudner Mark S, Lindner Netanel H

机构信息

Physics Department, Technion, Haifa, Israel.

Department of Physics, California Institute of Technology, Pasadena, CA, USA.

出版信息

Nat Commun. 2021 Sep 6;12(1):5299. doi: 10.1038/s41467-021-25511-9.

DOI:10.1038/s41467-021-25511-9
PMID:34489409
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8421454/
Abstract

Floquet engineering uses coherent time-periodic drives to realize designer band structures on-demand, thus yielding a versatile approach for inducing a wide range of exotic quantum many-body phenomena. Here we show how this approach can be used to induce non-equilibrium correlated states with spontaneously broken symmetry in lightly doped semiconductors. In the presence of a resonant driving field, the system spontaneously develops quantum liquid crystalline order featuring strong anisotropy whose directionality rotates as a function of time. The phase transition occurs in the steady state of the system achieved due to the interplay between the coherent external drive, electron-electron interactions, and dissipative processes arising from the coupling to phonons and the electromagnetic environment. We obtain the phase diagram of the system using numerical calculations that match predictions obtained from a phenomenological treatment and discuss the conditions on the system and the external drive under which spontaneous symmetry breaking occurs. Our results demonstrate that coherent driving can be used to induce non-equilibrium quantum phases of matter with dynamical broken symmetry.

摘要

弗洛凯工程利用相干时间周期驱动按需实现定制的能带结构,从而产生一种诱导多种奇异量子多体现象的通用方法。在此,我们展示了如何利用这种方法在轻掺杂半导体中诱导具有自发对称性破缺的非平衡关联态。在存在共振驱动场的情况下,系统自发地发展出具有强各向异性的量子液晶序,其方向性随时间旋转。由于相干外部驱动、电子-电子相互作用以及与声子和电磁环境耦合产生的耗散过程之间的相互作用,相变发生在系统的稳态中。我们通过数值计算获得了系统的相图,该计算与从唯象处理中得到的预测结果相匹配,并讨论了系统和外部驱动中发生自发对称性破缺的条件。我们的结果表明,相干驱动可用于诱导具有动态对称性破缺的非平衡量子物质相。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/eb2c/8421454/f9405a8377d1/41467_2021_25511_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/eb2c/8421454/2fbb5aac5676/41467_2021_25511_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/eb2c/8421454/2ee108dfb529/41467_2021_25511_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/eb2c/8421454/f9405a8377d1/41467_2021_25511_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/eb2c/8421454/2fbb5aac5676/41467_2021_25511_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/eb2c/8421454/2ee108dfb529/41467_2021_25511_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/eb2c/8421454/f9405a8377d1/41467_2021_25511_Fig3_HTML.jpg

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本文引用的文献

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Floquet metal-to-insulator phase transitions in semiconductor nanowires.
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