Tian Meng, Gao Yang, Zhou Pengyu, Chi Kailin, Zhang Yu, Liu Bao
College of Chemical Engineering, Northeast Electric Power University, Jilin, 132012, China.
Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China.
Phys Chem Chem Phys. 2021 Sep 22;23(36):20567-20573. doi: 10.1039/d1cp02864b.
The pressure-dependent photoluminescence kinetics of CsPbBr:Ce quantum dots was investigated by steady-state and time-resolved photoluminescence spectroscopy. Here, we propose a novel strategy to improve the persistent luminescence of CsPbBr quantum dots under high pressure through doping of Ce ions. Under high pressure, the peak intensity and energy of CsPbBr:Ce quantum dots decreased more slowly than those of CsPbBr quantum dots, which is manifested by pressure coefficient reductions of 0.08 a.u. GPa and 0.012 eV GPa, respectively. The time-resolved photoluminescence measurements revealed that Ce-doping can significantly modulate the photoluminescence kinetics to shorten the lifetimes of CsPbBr quantum dots with increasing pressure. These phenomena were absolutely different from those observed in CsPbBr quantum dots. These findings will be useful for broadening the application of optical devices based on all-inorganic perovskite materials under high pressure.
通过稳态和时间分辨光致发光光谱研究了CsPbBr:Ce量子点的压力依赖光致发光动力学。在此,我们提出了一种通过掺杂Ce离子来提高CsPbBr量子点在高压下持续发光的新策略。在高压下,CsPbBr:Ce量子点的峰值强度和能量下降速度比CsPbBr量子点慢,分别表现为压力系数降低0.08 a.u./GPa和0.012 eV/GPa。时间分辨光致发光测量表明,随着压力增加,Ce掺杂可以显著调节光致发光动力学,缩短CsPbBr量子点的寿命。这些现象与在CsPbBr量子点中观察到的现象完全不同。这些发现将有助于拓宽基于全无机钙钛矿材料的光学器件在高压下的应用。