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纳米尺度下单层和少层WTe₂的太赫兹响应

Terahertz response of monolayer and few-layer WTe at the nanoscale.

作者信息

Jing Ran, Shao Yinming, Fei Zaiyao, Lo Chiu Fan Bowen, Vitalone Rocco A, Ruta Francesco L, Staunton John, Zheng William J-C, Mcleod Alexander S, Sun Zhiyuan, Jiang Bor-Yuan, Chen Xinzhong, Fogler Michael M, Millis Andrew J, Liu Mengkun, Cobden David H, Xu Xiaodong, Basov D N

机构信息

Department of Physics, Columbia University, New York, NY, USA.

Department of Physics, University of Washington, Seattle, WA, USA.

出版信息

Nat Commun. 2021 Sep 22;12(1):5594. doi: 10.1038/s41467-021-23933-z.

Abstract

Tungsten ditelluride (WTe) is an atomically layered transition metal dichalcogenide whose physical properties change systematically from monolayer to bilayer and few-layer versions. In this report, we use apertureless scattering-type near-field optical microscopy operating at Terahertz (THz) frequencies and cryogenic temperatures to study the distinct THz range electromagnetic responses of mono-, bi- and trilayer WTe in the same multi-terraced micro-crystal. THz nano-images of monolayer terraces uncovered weakly insulating behavior that is consistent with transport measurements. The near-field signal on bilayer regions shows moderate metallicity with negligible temperature dependence. Subdiffractional THz imaging data together with theoretical calculations involving thermally activated carriers favor the semimetal scenario with [Formula: see text] over the semiconductor scenario for bilayer WTe. Also, we observed clear metallic behavior of the near-field signal on trilayer regions. Our data are consistent with the existence of surface plasmon polaritons in the THz range confined to trilayer terraces in our specimens. Finally, data for microcrystals up to 12 layers thick reveal how the response of a few-layer WTe asymptotically approaches the bulk limit.

摘要

二碲化钨(WTe)是一种原子层状的过渡金属二硫属化物,其物理性质会随着从单层到双层以及少层结构而系统性地发生变化。在本报告中,我们使用在太赫兹(THz)频率和低温下运行的无孔径散射型近场光学显微镜,来研究同一多梯田状微晶中单层、双层和三层WTe在不同太赫兹频段的电磁响应。单层梯田的太赫兹纳米图像揭示了与输运测量结果一致的弱绝缘行为。双层区域的近场信号显示出适度的金属性,且温度依赖性可忽略不计。亚衍射太赫兹成像数据以及涉及热激活载流子的理论计算表明,双层WTe的半金属情形比半导体情形更符合[公式:见原文]。此外,我们观察到三层区域的近场信号呈现出明显的金属行为。我们的数据与样品中局限于三层梯田的太赫兹频段表面等离激元极化激元的存在相一致。最后,厚度达12层的微晶数据揭示了少层WTe的响应是如何渐近地接近体极限的。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/88b8/8458490/0ba1d31d5f20/41467_2021_23933_Fig1_HTML.jpg

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