Han Tao, Liu Hongxia, Chen Shupeng, Wang Shulong, Yang Kun
Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, The School of Microelectronics, Xidian University, Xi'an 710071, China.
Micromachines (Basel). 2021 Aug 24;12(9):1006. doi: 10.3390/mi12091006.
Functional devices that use vertical van der Waals (vdWs) heterostructure material can effectively combine the properties of single component materials, and the strong interlayer coupling effect can change their electronic and optical properties. According to our research, WS/h-BN vertical vdWs heterostructure material can be synthesized by chemical vapor deposition (CVD) and wet transfer methods. Monolayer WS material and WS/h-BN vertical vdWs heterostructure material can be tested and characterized using XPS, SEM, EDS, AFM and Raman spectroscopy, which can prove the existence of corresponding materials. When the thickness of the material decreases, the Coulomb scattering amongst two-dimensional (2D) layered materials increases. This is because both the shielding effect and the distance between the channel and the interface layer decrease. FET devices are then fabricated on WS/h-BN vdWs heterostructure material by the electron beam lithography and evaporation processes. The effects of vdWs epitaxy on electrical transmission when WS/h-BN vdWs heterostructure material is formed are explored. Finally, the related electrical performance of FET devices is tested and analyzed. Our experimental research provides guidance for the use of electronic devices with vdWs heterostructure material.
使用垂直范德华（vdWs）异质结构材料的功能器件能够有效地结合单一组分材料的特性，并且强层间耦合效应能够改变它们的电学和光学性质。根据我们的研究，WS/h-BN垂直vdWs异质结构材料可以通过化学气相沉积（CVD）和湿法转移方法合成。单层WS材料和WS/h-BN垂直vdWs异质结构材料可以使用XPS、SEM、EDS、AFM和拉曼光谱进行测试和表征，这能够证明相应材料的存在。当材料厚度减小时，二维（2D）层状材料之间的库仑散射增加。这是因为屏蔽效应以及沟道与界面层之间的距离都减小了。然后通过电子束光刻和蒸发工艺在WS/h-BN vdWs异质结构材料上制造场效应晶体管（FET）器件。探索了形成WS/h-BN vdWs异质结构材料时vdWs外延对电传输的影响。最后，对FET器件的相关电学性能进行了测试和分析。我们的实验研究为使用具有vdWs异质结构材料的电子器件提供了指导。
