Wang Zhanwu, Jiang Dongyue, Zeng Fancong, Sui Yingrui
Department of Life Sciences, Jilin Normal University, Siping 136000, China.
Department of Physics, Jilin Normal University, Siping 136000, China.
Nanomaterials (Basel). 2021 Sep 18;11(9):2434. doi: 10.3390/nano11092434.
In this study, we prepared Na-doped CuZnSn(S,Se) [noted as (NaCu)ZnSn(S,Se)] films on the Mo substrate using a simple and cheap sol-gel method together with the post-annealing technique. The effects of selenization temperature on the properties of Na-doped CuZnSn(S,Se) were surveyed. The results indicated that some sulfur atoms in the films were substituted by selenium atoms by increasing the selenization temperature, and all films selenized at different temperatures had a kesterite structure. As the selenization temperature increased from 520 to 560 °C, the band gaps of the film can be tuned from 1.03 to 1 eV. The film with better morphology and opto-electrical properties can be obtained at an intermediate selenization temperature range (e.g., 540 °C), which had the lowest resistivity of 47.7 Ω cm, Hall mobility of 4.63 × 10 cm/Vs, and carrier concentration of 2.93 × 10 cm. Finally, the best power conversion efficiency (PCE) of 4.82% was achieved with an open circuit voltage (Voc) of 338 mV, a short circuit current density (Jsc) of 27.16 mA/cm and a fill factor (FF) of 52.59% when the selenization temperature was 540 °C.
在本研究中，我们采用简单且低成本的溶胶-凝胶法并结合后退火技术，在钼衬底上制备了钠掺杂的铜锌锡硫硒（记为(NaCu)ZnSn(S,Se)）薄膜。研究了硒化温度对钠掺杂铜锌锡硫硒性能的影响。结果表明，通过提高硒化温度，薄膜中的一些硫原子被硒原子取代，且在不同温度下硒化的所有薄膜均具有纤锌矿结构。随着硒化温度从520℃升高到560℃，薄膜的带隙可从1.03 eV调至1 eV。在中间硒化温度范围（例如540℃）可获得具有更好形貌和光电性能的薄膜，其最低电阻率为47.7Ω·cm，霍尔迁移率为4.63×10 cm²/V·s，载流子浓度为2.93×10 cm⁻³。最后，当硒化温度为540℃时，开路电压（Voc）为338 mV，短路电流密度（Jsc）为27.16 mA/cm²，填充因子（FF）为52.59%，实现了4.82%的最佳功率转换效率（PCE）。
