Aruna-Devi R, Latha M, Velumani S, Santos-Cruz J, Murali Banavoth, Chávez-Carvayar J-Á, Pulgarín-Agudelo F A, Vigil-Galán O
Facultad de Química, Materiales-Energía, Universidad Autónoma de Querétaro 76010 Santiago de Querétaro Qro Mexico
Departamento de Ingeniería Eléctrica (SEES), CINVESTAV-IPN Av. IPN 2508 07360 San Pedro Zacatenco Mexico
RSC Adv. 2019 Jun 11;9(32):18420-18428. doi: 10.1039/c9ra02669j. eCollection 2019 Jun 10.
For the first time, CZTS ink was formulated using low-temperature heating up synthesis of NCs. Besides, the influence of powder concentration on the properties of the films was examined. Subsequently, the CZTS films were annealed under a selenium (Se)/argon (Ar) atmosphere at different temperatures to enhance their properties. The influence of selenization temperature on the properties of CZTS films was examined in detail. Structural analysis showed a peak shift towards lower 2 values for CZTSSe films because of Se incorporation, resulting in larger lattice parameters for CZTSSe than CZTS. As the selenization temperature increases, an increment in the grain size was observed and the band gap was decreased from 1.52 to 1.05 eV. Hall Effect studies revealed a significant improvement in the mobility and carrier concentration with respect to selenization temperatures. Moreover, film selenized at 550 °C exhibited higher photoconductivity as compared to other films, indicating their potential application in the field of low-cost thin-film solar cells.
首次采用低温升温合成纳米晶的方法制备了CZTS墨水。此外,还研究了粉末浓度对薄膜性能的影响。随后,将CZTS薄膜在硒(Se)/氩(Ar)气氛中于不同温度下进行退火处理以改善其性能。详细研究了硒化温度对CZTS薄膜性能的影响。结构分析表明,由于硒的掺入,CZTSSe薄膜的峰值向较低的2值移动,导致CZTSSe的晶格参数比CZTS大。随着硒化温度的升高,观察到晶粒尺寸增加,带隙从1.52 eV降低到1.05 eV。霍尔效应研究表明,相对于硒化温度,迁移率和载流子浓度有显著改善。此外,与其他薄膜相比,在550℃硒化的薄膜表现出更高的光电导率,表明它们在低成本薄膜太阳能电池领域的潜在应用。