Zeng Fancong, Sui Yingrui, Ma Meiling, Zhao Na, Wang Tianyue, Wang Zhanwu, Yang Lili, Wang Fengyou, Li Huanan, Yao Bin
Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Jilin Normal University, Siping 136000, China.
State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China.
Nanomaterials (Basel). 2022 Aug 26;12(17):2942. doi: 10.3390/nano12172942.
CuNi·Zn·Sn(S,Se) (CNZTSSe) films were synthesized on Mo-coated glass substrates by the simple sol-gel means combined with the selenization process, and CNZTSSe-based solar cells were successfully prepared. The effects of selenization temperature on the performance and the photoelectric conversion efficiency (PCE) of the solar cells were systematically studied. The results show that the crystallinity of films increases as the selenization temperature raises based on nickel (Ni) doping. When the selenization temperature reached 540 °C, CNZTSSe films with a large grain size and a smooth surface can be obtained. The Se doping level gradually increased, and Se occupied the S position in the lattice as the selenization temperature was increased so that the optical band gap (Eg) of the CNZTSSe film could be adjusted in the range of 1.14 to 1.06 eV. In addition, the Ni doping can inhibit the deep level defect of Sn and the defect cluster [2Cu + Sn]. It reduces the carrier recombination path. Finally, at the optimal selenization temperature of 540 °C, the open circuit voltage (V) of the prepared device reached 344 mV and the PCE reached 5.16%.
通过简单的溶胶 - 凝胶法结合硒化工艺，在镀钼玻璃基板上合成了CuNi·Zn·Sn(S,Se)（CNZTSSe）薄膜，并成功制备了基于CNZTSSe的太阳能电池。系统研究了硒化温度对太阳能电池性能和光电转换效率（PCE）的影响。结果表明，基于镍（Ni）掺杂，随着硒化温度升高，薄膜的结晶度增加。当硒化温度达到540℃时，可获得具有大晶粒尺寸和光滑表面的CNZTSSe薄膜。随着硒化温度升高，硒掺杂水平逐渐增加，且硒在晶格中占据硫（S）的位置，从而使CNZTSSe薄膜的光学带隙（Eg）可在1.14至1.06 eV范围内调节。此外，镍掺杂可抑制锡的深能级缺陷和缺陷簇[2Cu + Sn]。它减少了载流子复合路径。最后，在540℃的最佳硒化温度下，所制备器件的开路电压（V）达到344 mV，光电转换效率（PCE）达到5.16%。
