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二维硫化铪、硒化铪和氧化铪出色的拉伸性及厚度依赖的机械性能。

Outstanding stretchability and thickness-dependent mechanical properties of 2D HfS, HfSe, and hafnium oxide.

作者信息

Jahn Yarden Mazal, Ya'akobovitz Assaf

机构信息

Department of Mechanical Engineering, Faculty of Engineering Sciences, Ben-Gurion University of the Negev, Israel.

出版信息

Nanoscale. 2021 Nov 18;13(44):18458-18466. doi: 10.1039/d1nr04240h.

Abstract

We experimentally determine the elastic properties of 2D HfS and HfSe - two emerging nano-materials whose moderate energy bandgap and dielectric oxidized layer make them highly attractive for functional electronic and optoelectronic systems. We found that the average Young's moduli of HfS and HfSe nano-drumheads are relatively low (45.3 ± 3.7 GPa for a 12.2 nm thick HfS and 39.3 ± 8.9 GPa for a 13.4 nm thick HfSe) and depend on the thickness of the nano-drumhead (increasing with thickness for HfS and decreasing for HfSe). Moreover, both materials demonstrate outstanding stretchability (fracture strength and maximal strain of 5.7 ± 0.4 GPa and 12.2-14.3%, respectively, for HfS; fracture strength and maximal strain of 4.5 ± 1.4 GPa and 14.0-20.9%, respectively, for HfSe), which far exceeds the stretchability of other 2D materials and of polymers that are commonly used in flexible electronic applications. Finally, we describe the controlled oxidation of HfSe using a relatively simple laser treatment, which increased the Young's moduli of the thin oxidized layers to 182.6 ± 54.3 GPa. The extraordinary elastic properties of HfS and HfSe, together with their excellent electrical and optoelectrical properties, make these 2D materials highly attractive for use in strain engineering and in various stretchable electronic and optoelectronic applications, such as wearable devices.

摘要

我们通过实验确定了二维HfS和HfSe的弹性特性——这两种新兴的纳米材料,其适度的能带隙和介电氧化层使其对功能性电子和光电子系统极具吸引力。我们发现,HfS和HfSe纳米鼓面的平均杨氏模量相对较低(对于12.2纳米厚的HfS为45.3±3.7吉帕,对于13.4纳米厚的HfSe为39.3±8.9吉帕),并且取决于纳米鼓面的厚度(HfS随厚度增加,HfSe随厚度减小)。此外,这两种材料都表现出出色的拉伸性(HfS的断裂强度和最大应变分别为5.7±0.4吉帕和12.2 - 14.3%;HfSe的断裂强度和最大应变分别为4.5±1.4吉帕和14.0 - 20.9%),远远超过其他二维材料以及柔性电子应用中常用的聚合物的拉伸性。最后,我们描述了使用相对简单的激光处理对HfSe进行可控氧化,这将薄氧化层的杨氏模量提高到了182.6±54.3吉帕。HfS和HfSe的非凡弹性特性,连同它们优异的电学和光电特性,使得这些二维材料在应变工程以及各种可拉伸电子和光电子应用(如可穿戴设备)中极具吸引力。

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