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二维电荷密度波硫族化合物作为负极超级电容器电极材料的未开发潜力。

Untapped potential of 2D charge density wave chalcogenides as negative supercapacitor electrode materials.

作者信息

elAttar Mahmoud M, Allam Nageh K

机构信息

Energy Materials Laboratory, School of Sciences and Engineering, The American University in Cairo New Cairo 11835 Egypt

出版信息

RSC Adv. 2022 Feb 23;12(11):6433-6439. doi: 10.1039/d2ra00457g. eCollection 2022 Feb 22.

Abstract

Two-dimensional (2D) materials have opened new avenues for the fabrication of ultrathin, transparent, and flexible functional devices. However, the conventional inorganic graphene analogues are either semiconductors or insulators with low electronic conductivity, hindering their use as supercapacitor electrode materials, which require high conductivity and large surface area. Recently, 2D charge density wave (CDW) materials, such as 2D chalcogenides, have attracted extensive attention as high performance functional nanomaterials in sensors, energy conversion, and spintronic devices. Herein, TaS is investigated as a potential CDW material for supercapacitors. The quantum capacitance ( ) of the different TaS polymorphs (1T, 2H, and 3R) was estimated using density functional theory calculations for different numbers of TaS layers and alkali-metal ion (Li, Na and K) intercalants. The results demonstrate the potential of 2H- and 3R-polymorphs as efficient negative electrode materials for supercapacitor devices. The intercalation of K and Na ions in 1T-TaS led to an increase in the C with the intercalation of Li ions resulting in a decrease in the . In contrast, Li ions were found to be the best intercalant for the 2H-TaS phase (highest ), while K ion intercalation was the best for the 3R-TaS phase. Moreover, increasing the number of layers of the1T-TaS resulted in the highest C. In contrast, increases upon decreasing the number of layers of 2H-TaS. Both 1T-MoS and 2H-TaS can be combined to construct a highly performing supercapacitor device as the positive and negative electrodes, respectively.

摘要

二维(2D)材料为超薄、透明且灵活的功能器件制造开辟了新途径。然而,传统的无机石墨烯类似物要么是半导体,要么是电子电导率低的绝缘体,这阻碍了它们用作超级电容器电极材料,因为超级电容器电极材料需要高电导率和大表面积。最近,二维电荷密度波(CDW)材料,如二维硫族化物,作为传感器、能量转换和自旋电子器件中的高性能功能纳米材料受到了广泛关注。在此,研究了TaS作为超级电容器潜在的CDW材料。使用密度泛函理论计算针对不同数量的TaS层和碱金属离子(Li、Na和K)插层剂,估算了不同TaS多晶型物(1T、2H和3R)的量子电容( )。结果表明2H和3R多晶型物作为超级电容器器件高效负极材料的潜力。1T-TaS中K和Na离子的插层导致 增加,而Li离子插层则导致 降低。相比之下,发现Li离子是2H-TaS相的最佳插层剂( 最高),而K离子插层对3R-TaS相最佳。此外,增加1T-TaS的层数导致 最高。相反,2H-TaS层数减少时 增加。1T-MoS和2H-TaS都可以分别作为正负极组合构建高性能超级电容器器件。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/13c4/8982093/ee89a637658d/d2ra00457g-f1.jpg

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