Lee Doyoung, Kim Chang-Lae, Sohn Yoonchul
Department of Welding and Joining Science Engineering, Chosun University, Gwangju 61452, Korea.
Department of Mechanical Engineering, Chosun University, Gwangju 61452, Korea.
Materials (Basel). 2021 Sep 30;14(19):5694. doi: 10.3390/ma14195694.
Liquid metals, such as Ga and eutectic Ga-In, have been extensively studied for various applications, including flexible and wearable devices. For applying liquid metal to electronic devices, interconnection with the various metal electrodes currently in use, and verifying their mechanical reliability are essential. Here, detailed investigations of the formation and growth of intermetallic compounds (IMCs) during the reactions between liquid Ga and solid nickel were conducted. Ga and Ni were reacted at 250, 300, and 350 °C for 10-240 min. The IMC double layer observed after the reactions contained a GaNi bottom layer formed during the reactions, and a GaNi top layer (with 89-95 at.% of Ga) precipitated during cooling. Numerous empty channels exist between the rod-type GaNi IMCs. GaNi growth occurred only in the vertical direction, without lateral coarsening and merging between the rods. The time exponents were measured at 1.1-1.5, implying that the reaction kinetics were near-interface reaction-controlled. The activation energy for GaNi growth was determined as 49.1 kJ/mol. The experimental results of the Ga-Ni reaction study are expected to provide important information for incorporating liquid metals into electronic devices in the future.
诸如镓（Ga）和共晶镓铟（Ga-In）之类的液态金属已被广泛研究用于各种应用，包括柔性和可穿戴设备。为了将液态金属应用于电子设备，与目前正在使用的各种金属电极进行互连并验证其机械可靠性至关重要。在此，对液态镓与固态镍反应过程中金属间化合物（IMC）的形成和生长进行了详细研究。镓和镍在250、300和350°C下反应10 - 240分钟。反应后观察到的IMC双层包含反应过程中形成的GaNi底层，以及冷却过程中析出的GaNi顶层（Ga含量为89 - 95原子百分比）。棒状GaNi IMC之间存在许多空通道。GaNi仅在垂直方向生长，棒之间没有横向粗化和合并。时间指数测量值为1.1 - 1.5，这意味着反应动力学受近界面反应控制。GaNi生长的活化能确定为49.1 kJ/mol。镓 - 镍反应研究的实验结果有望为未来将液态金属纳入电子设备提供重要信息。
