Zhang Kun, He Jiajing, He Ting, Li Qing, Peng Meng, Guo Jiaxiang, Zhang Tao, Wang Xiaoming, Wen Huimin, Zhu He, Li Ning, Wang Peng, Dan Yaping, Hu Weida
Opt Lett. 2021 Oct 15;46(20):5165-5168. doi: 10.1364/OL.441553.
Silicon photonics has become the preferred candidate for technologies applicable to multifarious fields. However, the applications are strictly limited by the intrinsic in-band photo effect of silicon. Herein, near-infrared photodetectors that break through the silicon bandgap by Er/O hyperdoping are fabricated, potentially extending their applications into telecommunications, low-light-level night vision, medical treatment, and others. Er/O-hyperdoped silicon was achieved as an infrared light absorption layer through ion implantation. The lattice damage caused by ion implantation was repaired by a deep cooling process in which high-temperature samples were cooled by helium flushing cooled by liquid nitrogen. Traditional junction and metallization processes were performed to form a photodiode. We demonstrate that the device has a spectral range up to the wavelength of 1568 nm, a maximum responsivity of 165 µA/W at 1310 nm, and 3 dB cutoff bandwidth up to 3 kHz. Finally, temperature-dependent optical-electrical characteristics were measured to demonstrate the activation mechanism of Er/O in silicon. This Letter proves silicon's potential in realizing extended infrared detection at room temperature, and it provides a possible way to fabricate infrared optoelectronics and signal processing integrated chips on a CMOS (complementary metal-oxide-semiconductor) platform.
硅光子学已成为适用于多种领域技术的首选候选者。然而，这些应用受到硅固有带内光效应的严格限制。在此，通过铒/氧超掺杂突破硅带隙的近红外光电探测器被制造出来，这有可能将其应用扩展到电信领域、微光夜视、医疗治疗等其他领域。通过离子注入实现了铒/氧超掺杂硅作为红外光吸收层。由离子注入引起的晶格损伤通过深冷却工艺修复，在该工艺中，高温样品通过液氮冷却的氦气冲洗进行冷却。执行传统的结和金属化工艺以形成光电二极管。我们证明该器件的光谱范围高达1568纳米波长，在1310纳米处的最大响应度为165微安/瓦，3分贝截止带宽高达3千赫。最后，测量了温度相关的光电特性以证明铒/氧在硅中的激活机制。这封信证明了硅在室温下实现扩展红外探测的潜力，并为在CMOS（互补金属氧化物半导体）平台上制造红外光电子和信号处理集成芯片提供了一种可能的方法。
