Sun Haibin, Liu Xiaolong, Xu Caixia, Xu Long, Chen Yuwei, Yang Haima, Yang Xing, Rao Peng, Sun Shengli, Zhao Li
Key Laboratory of Intelligent Infrared Perception Chinese Academy Science (CAS), Shanghai Institute of Technical Physics, Chinese Academy Science (CAS), Shanghai 200043, China.
Department of Remote Sensing and Photogrammetry, Finnish Geospatial Research Institute, Vuorimiehentie 5, FI-02150 Espoo, Finland.
Nanomaterials (Basel). 2024 Oct 2;14(19):1591. doi: 10.3390/nano14191591.
Femtosecond-laser-fabricated black silicon has been widely used in the fields of solar cells, photodetectors, semiconductor devices, optical coatings, and quantum computing. However, the responsive spectral range limits its application in the near- to mid-infrared wavelengths. To further increase the optical responsivity in longer wavelengths, in this work, silicon (Si) was co-hyperdoped with nitrogen (N) and selenium (Se) through the deposition of Se films on Si followed by femtosecond (fs)-laser irradiation in an atmosphere of NF. The optical and crystalline properties of the Si:N/Se were found to be influenced by the precursor Se film and laser fluence. The resulting photodetector, a product of this innovative approach, exhibited an impressive responsivity of 24.8 A/W at 840 nm and 19.8 A/W at 1060 nm, surpassing photodetectors made from Si:N, Si:S, and Si:S/Se (the latter two fabricated in SF6). These findings underscore the co-hyperdoping method's potential in significantly improving optoelectronic device performance.
飞秒激光制备的黑硅已广泛应用于太阳能电池、光电探测器、半导体器件、光学涂层和量子计算等领域。然而，其响应光谱范围限制了它在近红外到中红外波长范围内的应用。为了进一步提高在更长波长下的光学响应度，在本工作中，通过在硅上沉积硒薄膜，然后在NF气氛中进行飞秒（fs）激光辐照，将硅（Si）与氮（N）和硒（Se）进行共超掺杂。发现Si:N/Se的光学和晶体性质受前驱体硒薄膜和激光能量密度的影响。这种创新方法所制备的光电探测器在840nm处表现出令人印象深刻的24.8A/W的响应度，在1060nm处为19.8A/W，超过了由Si:N、Si:S和Si:S/Se（后两者在SF6中制备）制成的光电探测器。这些发现突出了共超掺杂方法在显著提高光电器件性能方面的潜力。
