Kong Weijin, Zhang Jicheng, Wong Deniz, Yang Wenyun, Yang Jinbo, Schulz Christian, Liu Xiangfeng
Center of Materials Science and Optoelectronics Engineering, College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China.
Helmholtz-Center Berlin for Materials and Energy, Hahn-Meitner-Platz 1, 14109, Berlin, Germany.
Angew Chem Int Ed Engl. 2021 Dec 20;60(52):27102-27112. doi: 10.1002/anie.202112508. Epub 2021 Nov 17.
High-voltage LiCoO delivers a high capacity but sharp fading is a critical issue, and the capacity decay mechanism is also poorly understood. Herein, we clarify that the escape of surface oxygen and Li-insulator Co O formation are the main causes for the capacity fading of 4.6 V LiCoO . We propose the inhibition of the oxygen escape for achieving stable 4.6 V LiCoO by tailoring the Co3d and O2p band center and enlarging their band gap with MgF doping. This enhances the ionicity of the Co-O bond and the redox activity of Co and improves cation migration reversibility. The inhibition of oxygen escape suppresses the formation of Li-insulator Co O and maintains the surface structure integrity. Mg acts as a pillar, providing a stable and enlarged channel for fast Li intercalation/extraction. The modulated LiCoO shows almost zero strain and achieves a record capacity retention at 4.6 V: 92 % after 100 cycles at 1C and 86.4 % after 1000 cycles at 5C.
高压LiCoO₂具有高容量,但容量急剧衰减是一个关键问题,且容量衰减机制也尚不明确。在此,我们阐明表面氧逸出和Li-绝缘Co₃O₄的形成是4.6 V LiCoO₂容量衰减的主要原因。我们提出通过调整Co3d和O2p能带中心并通过MgF₂掺杂扩大其带隙来抑制氧逸出,以实现稳定的4.6 V LiCoO₂。这增强了Co-O键的离子性和Co的氧化还原活性,并改善了阳离子迁移可逆性。氧逸出的抑制抑制了Li-绝缘Co₃O₄的形成并维持了表面结构完整性。Mg起到支柱作用,为快速的Li嵌入/脱出提供稳定且扩大的通道。经调制的LiCoO₂显示出几乎为零的应变,并在4.6 V下实现了创纪录的容量保持率:在1C下100次循环后为92%,在5C下1000次循环后为86.4%。