Tappertzhofen S, Nielen L, Valov I, Waser R
Chair for Micro- and Nanoelectronics, Department of Electrical Engineering and Information Technology, TU Dortmund University, Emil-Figge-Straße 68, D-44227, Dortmund, Germany.
aixACCT Systems GmbH, Talbotstraße 25, D-52068 Aachen, Germany.
Nanotechnology. 2021 Nov 5;33(4). doi: 10.1088/1361-6528/ac317f.
When designing the gate-dielectric of a floating-gate-transistor, one must make a tradeoff between the necessity of providing an ultra-small leakage current behavior for long state retention, and a moderate to high tunneling-rate for fast programming speed. Here we report on a memristively programmable transistor that overcomes this tradeoff. The operation principle is comparable to floating-gate-transistors, but the advantage of the analyzed concept is that ions instead of electrons are used for programming. Since the mass of ions is significantly larger than the effective mass of electrons, gate-dielectrics with higher leakage current levels can be used. We demonstrate the practical feasibility of the device using a proof-of-concept study based on a micrometer-sized thin-film transistor and LT-Spice simulations of 32 nm transistors. Memristively programmable transistors have the potential of high programming endurance and retention times, fast programming speeds, and high scalability.
在设计浮栅晶体管的栅极电介质时，必须在为长时间状态保持提供超小漏电流行为的必要性与为实现快速编程速度而保持适度到高隧穿率之间进行权衡。在此，我们报告一种克服了这种权衡的忆阻可编程晶体管。其工作原理与浮栅晶体管类似，但所分析概念的优势在于使用离子而非电子进行编程。由于离子的质量明显大于电子的有效质量，因此可以使用具有更高漏电流水平的栅极电介质。我们通过基于微米级薄膜晶体管的概念验证研究以及对32纳米晶体管的LT-Spice模拟，证明了该器件的实际可行性。忆阻可编程晶体管具有高编程耐久性和保持时间、快速编程速度以及高可扩展性的潜力。
