Retention characteristics of Schottky barrier tunneling transistor-nano floating gate memory with various side walls.

At present, the nano floating gate memory (NFGM) device has shown a great promise as a ultra-dense, high-endurance memory device for low-power applications. As the size of the NFGM reduced, the short channel effect became one of the critical issues in the base Field Effect Transistor (FET). Schottky barrier tunneling transistor (SBTT) can improve the controllability of the short channel effect. In this work, we studied nano floating gate memory based on the SBTT. Erbium silicide was employed instead of the conventional heavily doped S/D. The NFGM device based on the SBTT used Si nanocrystals as charge storages. The subthreshold slope and the threshold voltage of the SBTT-NFGM were 90 mV/dec. and 0.2 V, respectively. The memory window appeared about 4 V after the applied write/erase bias at +/- 11 V for 500 ms. The write/erase speeds of the memory device were 50 ms and 200 ms at +/- 13 V, respectively. We also analyzed the retention characteristics of the Schottky barrier tunneling transistor nonvolatile floating gate memory according to the various side walls.