Ahn Jongtae, Ko Kyul, Kyhm Ji-Hoon, Ra Hyun-Soo, Bae Heesun, Hong Sungjae, Kim Dae-Yeon, Jang Jisu, Kim Tae Wook, Choi Sungwon, Kang Ji-Hoon, Kwon Namhee, Park Soohyung, Ju Byeong-Kwon, Poon Ting-Chung, Park Min-Chul, Im Seongil, Hwang Do Kyung
Center of Optoelectronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea.
Van der Waals Materials Research Center, Institute of Physics and Applied Physics, Yonsei University, Seoul 03722, Republic of Korea.
ACS Nano. 2021 Nov 23;15(11):17917-17925. doi: 10.1021/acsnano.1c06234. Epub 2021 Oct 22.
Polarization-sensitive photodetection has attracted considerable attention as an emerging technology for future optoelectronic applications such as three-dimensional (3D) imaging, quantum optics, and encryption. However, traditional photodetectors based on Si or III-V InGaAs semiconductors cannot directly detect polarized light without additional optical components. Herein, we demonstrate a self-powered linear-polarization-sensitive near-infrared (NIR) photodetector using a two-dimensional WSe/ReSe van der Waals heterostructure. The WSe/ReSe heterojunction photodiode with semivertical geometry exhibits excellent performance: an ideality factor of 1.67, a broad spectral photoresponse of 405-980 nm with a significant photovoltaic effect, outstanding linearity with a linear dynamic range wider than 100 dB, and rapid photoswitching behavior with a cutoff frequency up to 100 kHz. Strongly polarized excitonic transitions around the band edge in ReSe lead to significant 980 nm NIR linear-polarization-dependent photocurrent. This linear polarization sensitivity remains stable even after exposure to air for longer than five months. Furthermore, by leveraging the NIR (980 nm)-selective linear polarization detection of this photodiode under photovoltaic operation, we demonstrate digital incoherent holographic 3D imaging.
偏振敏感光探测作为一种新兴技术,在诸如三维(3D)成像、量子光学和加密等未来光电子应用中引起了广泛关注。然而,基于硅或III-V族铟镓砷半导体的传统光电探测器在没有额外光学组件的情况下无法直接探测偏振光。在此,我们展示了一种使用二维WSe/ReSe范德华异质结构的自供电线性偏振敏感近红外(NIR)光电探测器。具有半垂直几何结构的WSe/ReSe异质结光电二极管表现出优异的性能:理想因子为1.67,在405 - 980 nm范围内具有宽光谱光响应且具有显著的光伏效应,线性度出色,线性动态范围超过100 dB,并且具有高达100 kHz的截止频率的快速光开关行为。ReSe中带边附近强烈的偏振激子跃迁导致了显著的980 nm近红外线性偏振依赖光电流。即使在暴露于空气中超过五个月后,这种线性偏振灵敏度仍保持稳定。此外,通过利用该光电二极管在光伏操作下对近红外(980 nm)的选择性线性偏振检测,我们展示了数字非相干全息3D成像。