Choi Yunyeong, Park Jisun, Shin Hyungsoon
Department of Electronic and Electrical Engineering, Ewha Womans University, Seoul 03760, Korea.
Graduate Program in Smart Factory, Ewha Womans University, Seoul 03760, Korea.
Materials (Basel). 2021 Oct 18;14(20):6167. doi: 10.3390/ma14206167.
The dependency of device degradation on bending direction and channel length is analyzed in terms of bandgap states in amorphous indium-gallium-zinc-oxide (a-IGZO) films. The strain distribution in an a-IGZO film under perpendicular and parallel bending of a device with various channel lengths is investigated by conducting a three-dimensional mechanical simulation. Based on the obtained strain distribution, new device simulation structures are suggested in which the active layer is defined as consisting of multiple regions. The different arrangements of a highly strained region and density of states is proportional to the strain account for the measurement tendency. The analysis performed using the proposed structures reveals the causes underlying the effects of different bending directions and channel lengths, which cannot be explained using the existing simulation methods in which the active layer is defined as a single region.
从非晶铟镓锌氧化物（a-IGZO）薄膜中的带隙态角度分析了器件退化对弯曲方向和沟道长度的依赖性。通过进行三维力学模拟，研究了具有不同沟道长度的器件在垂直和平行弯曲下a-IGZO薄膜中的应变分布。基于所获得的应变分布，提出了新的器件模拟结构，其中有源层被定义为由多个区域组成。高应变区域的不同排列以及态密度与应变成正比，这解释了测量趋势。使用所提出的结构进行的分析揭示了不同弯曲方向和沟道长度影响的潜在原因，而这些原因无法用将有源层定义为单个区域的现有模拟方法来解释。
