Zhou Chao, Feng Yanpeng, Ma Liyang, Huang Haoliang, Si Yangyang, Wang Hailin, Huang Sizhe, Li Jingxuan, Kuo Chang-Yang, Das Sujit, Tang Yunlong, Liu Shi, Chen Zuhuang
State Key Laboratory of Precision Welding and Joining of Materials and Structures, School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, China.
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.
Nat Commun. 2025 Aug 15;16(1):7593. doi: 10.1038/s41467-025-63048-3.
Due to traits of CMOS compatibility and scalability, HfO-based ferroelectric ultrathin films are promising candidates for next-generation low-power memory devices. However, their commercialization has been hindered by reliability issues, with fatigue failure being a major impediment. Here, we report superior ferroelectric performances with fatigue-free behavior in interface-designed HfZrO-based ultrathin heterostructures. A coherent CeO/HfZrO heterointerface is constructed, wherein the oxygen-active, multivalent CeO acts as an "oxygen sponge", capable of reversibly accepting and releasing oxygen ions. This design effectively alleviates defect aggregation at the electrode-ferroelectric interface and reduces coercive field, enabling improved switching characteristics and exceptional reliability. Further, a symmetric capacitor architecture is designed to minimize the imprint, thereby suppressing the oriented oxygen defect drift. The two-pronged technique prevents intense fluctuations of oxygen concentration within the device during electrical cycling, suppressing the formation of paraelectric phase and polarization degradation. The interfacial design technique ensures superior switching and cycling performances of HfZrO capacitors, embodying a fatigue-free feature exceeding 10 switching cycles and an endurance lifetime surpassing 10 cycles, along with excellent temperature stability and long retention. These findings pave the way for the development of high-performance and ultra-stable hafnia-based ferroelectric devices.
由于具有CMOS兼容性和可扩展性的特性，基于HfO的铁电超薄膜是下一代低功耗存储器件的有前途的候选材料。然而，它们的商业化受到可靠性问题的阻碍，疲劳失效是一个主要障碍。在此，我们报道了在界面设计的基于HfZrO的超薄异质结构中具有无疲劳行为的优异铁电性能。构建了一个相干的CeO/HfZrO异质界面，其中氧活性的多价CeO充当“氧海绵”，能够可逆地接受和释放氧离子。这种设计有效地减轻了电极-铁电体界面处的缺陷聚集并降低了矫顽场，从而改善了开关特性并具有出色的可靠性。此外，设计了一种对称电容器架构以最小化印记，从而抑制定向氧缺陷漂移。这种双管齐下的技术可防止器件在电循环期间氧浓度的剧烈波动，抑制顺电相的形成和极化退化。界面设计技术确保了HfZrO电容器具有优异的开关和循环性能，体现了超过10次开关循环的无疲劳特性和超过10次循环的耐久性寿命，以及出色的温度稳定性和长保持时间。这些发现为高性能和超稳定的氧化铪基铁电器件的开发铺平了道路。
