Li Pengfei, Zhang Yulin, Guo Yunlong, Jiang Lang, Zhang Zongbo, Xu Caihong
Key Laboratory of Science and Technology on High-Tech Polymer Materials, Chinese Academy of Sciences, Beijing 100190, People's Republic of China.
University of Chinese Academy of Sciences, Beijing 100149, People's Republic of China.
J Phys Chem Lett. 2021 Nov 11;12(44):10728-10734. doi: 10.1021/acs.jpclett.1c03031. Epub 2021 Oct 28.
SiO is an important dielectric material layer for resistive switching memory due to its compatibility with complementary metal-oxide semiconductor (CMOS) technology. Here we propose a solution process for a SiO dielectric layer based on perhydropolysilazane (PHPS). A series of SiO layers with different compositions are prepared by controlling the conversion process from PHPS, then the resistance switching behaviors of typical Ag/SiO/Au memristors are analyzed. The effect of oxygen vacancies and Si-OH groups on the formation and rupture of Ag conducting filaments (CFs) in the SiO layer was thoroughly investigated. Ultimately, we achieved a high-performance memristor with a coefficient of variation (σ/μ) as low as 0.16 ± 0.08 and an on/off ratio as high as 10, which can rival the performance of the SiO memristors based on the high-vacuum and high-cost vapor deposition methods. These findings demonstrate the high promise of the PHPS-derived SiO dielectric layer in the field of memristors.
由于二氧化硅（SiO）与互补金属氧化物半导体（CMOS）技术具有兼容性，因此它是用于电阻式开关存储器的重要介电材料层。在此，我们提出了一种基于全氢聚硅氮烷（PHPS）的SiO介电层的溶液制备工艺。通过控制PHPS的转化过程制备了一系列不同成分的SiO层，然后分析了典型的Ag/SiO/Au忆阻器的电阻开关行为。深入研究了氧空位和Si-OH基团对SiO层中Ag导电细丝（CFs）形成和断裂的影响。最终，我们实现了一种高性能忆阻器，其变异系数（σ/μ）低至0.16±0.08，开/关比高达10，可与基于高真空和高成本气相沉积方法的SiO忆阻器的性能相媲美。这些发现证明了PHPS衍生的SiO介电层在忆阻器领域具有很高的应用前景。
