Ilyas Nasir, Li Dongyang, Li Chunmei, Jiang Xiangdong, Jiang Yadong, Li Wei
School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China.
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China.
Nanoscale Res Lett. 2020 Jan 31;15(1):30. doi: 10.1186/s11671-020-3249-7.
In this study, by inserting a buffer layer of TiO between the SiO:Ag layer and the bottom electrode, we have developed a memristor device with a simple structure of Ag/SiO:Ag/TiO/p-Si by a physical vapor deposition process, in which the filament growth and rupture can be efficiently controlled during analog switching. The synaptic characteristics of the memristor device with a wide range of resistance change for weight modulation by implementing positive or negative pulse trains have been investigated extensively. Several learning and memory functions have been achieved simultaneously, including potentiation/depression, paired-pulse-facilitation (PPF), short-term plasticity (STP), and STP-to-LTP (long-term plasticity) transition controlled by repeating pulses more than a rehearsal operation, and spike-time-dependent-plasticity (STDP) as well. Based on the analysis of logarithmic I-V characteristics, it has been found that the controlled evolution/dissolution of conductive Ag-filaments across the dielectric layers can improve the performance of the testing memristor device.
在本研究中，通过在SiO:Ag层与底部电极之间插入一层TiO缓冲层，我们利用物理气相沉积工艺开发了一种结构简单的忆阻器器件，即Ag/SiO:Ag/TiO/p-Si结构，其中在模拟开关过程中可以有效地控制细丝的生长和断裂。通过施加正或负脉冲序列对具有宽电阻变化范围的忆阻器器件进行权重调制的突触特性已得到广泛研究。同时实现了多种学习和记忆功能，包括增强/抑制、双脉冲易化（PPF）、短期可塑性（STP）以及通过重复超过排练操作的脉冲控制的STP到LTP（长期可塑性）转变，还有尖峰时间依赖可塑性（STDP）。基于对对数I-V特性的分析，发现导电Ag细丝在介电层中的受控演化/溶解可以改善测试忆阻器器件的性能。
