Koryazhkina Maria N, Filatov Dmitry O, Tikhov Stanislav V, Belov Alexey I, Serov Dmitry A, Kryukov Ruslan N, Zubkov Sergey Yu, Vorontsov Vladislav A, Pavlov Dmitry A, Gryaznov Evgeny G, Orlova Elena S, Shchanikov Sergey A, Mikhaylov Alexey N, Kim Sungjun
Research and Education Center "Physics of Solid-State Nanostructures", National Research Lobachevsky State University of Nizhny Novgorod, 603022 Nizhny Novgorod, Russia.
Department of English for Natural Sciences, National Research Lobachevsky State University of Nizhny Novgorod, 603022 Nizhny Novgorod, Russia.
Nanomaterials (Basel). 2023 Jul 16;13(14):2082. doi: 10.3390/nano13142082.
The electrical characteristics and resistive switching properties of memristive devices have been studied in a wide temperature range. The insulator and electrode materials of these devices (silicon oxide and titanium nitride, respectively) are fully compatible with conventional complementary metal-oxide-semiconductor (CMOS) fabrication processes. Silicon oxide is also obtained through the low-temperature chemical vapor deposition method. It is revealed that the as-fabricated devices do not require electroforming but their resistance state cannot be stored before thermal treatment. After the thermal treatment, the devices exhibit bipolar-type resistive switching with synaptic behavior. The conduction mechanisms in the device stack are associated with the effect of traps in the insulator, which form filaments in the places where the electric field is concentrated. The filaments shortcut the capacitance of the stack to different degrees in the high-resistance state (HRS) and in the low-resistance state (LRS). As a result, the electron transport possesses an activation nature with relatively low values of activation energy in an HRS. On the contrary, Ohm's law and tunneling are observed in an LRS. CMOS-compatible materials and low-temperature fabrication techniques enable the easy integration of the studied resistive-switching devices with traditional analog-digital circuits to implement new-generation hardware neuromorphic systems.
忆阻器器件的电学特性和电阻开关特性已在很宽的温度范围内进行了研究。这些器件的绝缘体和电极材料（分别为氧化硅和氮化钛）与传统的互补金属氧化物半导体（CMOS）制造工艺完全兼容。氧化硅也是通过低温化学气相沉积法获得的。结果表明，所制备的器件不需要电形成，但在热处理之前其电阻状态无法存储。热处理后，器件表现出具有突触行为的双极型电阻开关。器件堆栈中的传导机制与绝缘体中陷阱的作用有关，这些陷阱在电场集中的地方形成细丝。细丝在高电阻状态（HRS）和低电阻状态（LRS）下不同程度地使堆栈的电容短路。结果，电子传输在HRS中具有激活性质，激活能值相对较低。相反，在LRS中观察到欧姆定律和隧穿现象。CMOS兼容材料和低温制造技术使得所研究的电阻开关器件能够轻松地与传统的模拟 - 数字电路集成，以实现新一代硬件神经形态系统。
