D'Antuono M, Kalaboukhov A, Caruso R, Wissberg S, Weitz Sobelman S, Kalisky B, Ausanio G, Salluzzo M, Stornaiuolo D
University of Naples Federico II, Italy.
CNR-SPIN, Naples, Italy.
Nanotechnology. 2021 Nov 30;33(8). doi: 10.1088/1361-6528/ac385e.
We present a 'top-down' patterning technique based on ion milling performed at low-temperature, for the realization of oxide two-dimensional electron system devices with dimensions down to 160 nm. Using electrical transport and scanning Superconducting QUantum Interference Device measurements we demonstrate that the low-temperature ion milling process does not damage the 2DES properties nor creates oxygen vacancies-related conducting paths in the STO substrate. As opposed to other procedures used to realize oxide 2DES devices, the one we propose gives lateral access to the 2DES along the in-plane directions, finally opening the way to coupling with other materials, including superconductors.
我们提出了一种基于低温离子铣削的“自上而下”图案化技术，用于实现尺寸低至160 nm的氧化物二维电子系统器件。通过电输运和扫描超导量子干涉器件测量，我们证明低温离子铣削过程不会损害二维电子气（2DES）特性，也不会在钇钡铜氧（STO）衬底中产生与氧空位相关的导电路径。与用于实现氧化物二维电子气器件的其他方法不同，我们提出的方法能够沿面内方向从侧面接触二维电子气，最终为与包括超导体在内的其他材料耦合开辟了道路。
