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通过在(Pb,La)(Zr,Ti)O多层薄膜中构建成分梯度实现介电常数的良好温度稳定性。

Achieving Good Temperature Stability of Dielectric Constant by Constructing Composition Gradient in (Pb,La)(Zr,Ti)O Multilayer Thin Films.

作者信息

Wu Ming, Xiao Yanan, Yan Yu, Liu Yongbin, Li Huaqiang, Gao Jinghui, Zhong Lisheng, Lou Xiaojie

机构信息

State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710049, China.

Frontier Institute of Science and Technology, and State Key Laboratory for Mechanical Behavior, Xi'an Jiaotong University, Xi'an 710049, China.

出版信息

Materials (Basel). 2022 Jun 10;15(12):4123. doi: 10.3390/ma15124123.

DOI:10.3390/ma15124123
PMID:35744182
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9227876/
Abstract

Ferroelectrics with a high dielectric constant are ideal materials for the fabrication of miniaturized and integrated electronic devices. However, the dielectric constant of ferroelectrics varies significantly with the change of temperature, which is detrimental to the working stability of electronic devices. This work demonstrates a new strategy to design a ferroelectric dielectric with a high temperature stability, that is, the design of a multilayer relaxor ferroelectric thin film with a composition gradient. As a result, the fabricated up-graded (Pb,La)(Zr,Ti)O multilayer thin film showed a superior temperature stability of the dielectric constant, with variation less than 7% in the temperature range from 30 °C to 200 °C, and more importantly, the variation was less than 2.5% in the temperature range from 75 °C to 200 °C. This work not only develops a dielectric material with superior temperature stability, but also demonstrates a promising method to enhance the temperature stability of ferroelectrics.

摘要

具有高介电常数的铁电体是制造小型化和集成化电子器件的理想材料。然而,铁电体的介电常数会随温度变化而显著改变,这对电子器件的工作稳定性不利。这项工作展示了一种设计具有高温稳定性的铁电介质的新策略,即设计一种具有成分梯度的多层弛豫铁电薄膜。结果,制备的升级版(Pb,La)(Zr,Ti)O多层薄膜表现出优异的介电常数温度稳定性,在30℃至200℃的温度范围内变化小于7%,更重要的是,在75℃至200℃的温度范围内变化小于2.5%。这项工作不仅开发出了一种具有优异温度稳定性的介电材料,还展示了一种增强铁电体温度稳定性的有前景的方法。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/780b/9227876/9b03d63f8eee/materials-15-04123-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/780b/9227876/8b9a9053fd5b/materials-15-04123-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/780b/9227876/e2e949f17bba/materials-15-04123-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/780b/9227876/e0c25b9d1aa3/materials-15-04123-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/780b/9227876/56af1b685f44/materials-15-04123-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/780b/9227876/9b03d63f8eee/materials-15-04123-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/780b/9227876/8b9a9053fd5b/materials-15-04123-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/780b/9227876/e2e949f17bba/materials-15-04123-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/780b/9227876/e0c25b9d1aa3/materials-15-04123-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/780b/9227876/56af1b685f44/materials-15-04123-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/780b/9227876/9b03d63f8eee/materials-15-04123-g005.jpg

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