Bachmann C M, Cooper L N, Dembo A, Zeitouni O
Department of Physics, Applied Mathematics, Brown University, Providence, RI 02912.
Proc Natl Acad Sci U S A. 1987 Nov;84(21):7529-31. doi: 10.1073/pnas.84.21.7529.
We present a relaxation model for memory based on a generalized coulomb potential. The model has arbitrarily large storage capacity and, in addition, well-defined basins of attraction about stored memory states. The model is compared with the Hopfield relaxation model.
我们提出了一种基于广义库仑势的记忆松弛模型。该模型具有任意大的存储容量，此外，围绕存储的记忆状态具有明确的吸引盆。将该模型与霍普菲尔德松弛模型进行了比较。
