Xu Xinyue, Su Yanghang, Dong Yuanpeng, Luo Xiao, Wang Shihao, Zhou Wenyu, Li Rong, Homewood Kevin Peter, Xia Xiaohong, Gao Yun, Chen Xuxing
Ministry-of-Education Key Laboratory for the Green Preparation and Application of Functional Materials, School of Materials Science & Engineering, Hubei University, Wuhan 430062, China.
Ministry-of-Education Key Laboratory for the Green Preparation and Application of Functional Materials, School of Materials Science & Engineering, Hubei University, Wuhan 430062, China; School of Sciences, Hubei University of Automotive Technology, Shiyan 442002, China.
J Hazard Mater. 2022 Feb 15;424(Pt D):127685. doi: 10.1016/j.jhazmat.2021.127685. Epub 2021 Nov 6.
Achieving efficient photocatalytic degradation of atmospheric volatile organic compounds (VOCs) under sun-light is still a significant challenge for environmental protection. The S-scheme heterojunction with its unique charge migration route, high charge separation rate and strong redox ability, has great potential. However, how to regulate interfacial charge transfer of the S-scheme heterojunction is of significant importance. Here, density functional theory (DFT) calculations were first conducted and predicted that an S-scheme heterojunction could be formed in the CdS quantum dots/BiMoO monolayer system. Subsequently, this novel heterojunction is constructed by in-situ hydrothermal synthesis of CdS quantum dots on monolayer BiMoO. Under visible-light, this novel S-scheme system gives a high-efficiency photocatalytic degradation rate (6.04 × 10 min) towards CH, which is 30.3 times higher than that of pure CdS (1.99 × 10 min) and 41.7 times higher than pure BiMoO (1.45 × 10 min). Strong evidence for the S-scheme charge transfer path is provided by in-situ XPS, PL, TRPL and EPR.
在阳光下实现对大气挥发性有机化合物（VOCs）的高效光催化降解仍然是环境保护面临的重大挑战。具有独特电荷迁移途径、高电荷分离率和强氧化还原能力的S型异质结具有巨大潜力。然而，如何调节S型异质结的界面电荷转移至关重要。在此，首先进行了密度泛函理论（DFT）计算，并预测在CdS量子点/ BiMoO单层体系中可形成S型异质结。随后，通过在单层BiMoO上原位水热合成CdS量子点构建了这种新型异质结。在可见光下，这种新型S型体系对CH的光催化降解率高达（6.04×10分钟），分别是纯CdS（1.99×10分钟）的30.3倍和纯BiMoO（1.45×10分钟）的41.7倍。原位XPS、PL、TRPL和EPR为S型电荷转移路径提供了有力证据。
