Yang Zhen, Zhang Rizhen, Wang Zhiyuan, Xu Peipeng, Zhang Wei, Kang Zhe, Zheng Jiajiu, Dai Shixun, Wang Rongping, Majumdar Arka
Opt Express. 2021 Oct 11;29(21):33225-33233. doi: 10.1364/OE.434808.
We demonstrate high quality (Q) factor microring resonators in high index-contrast GeSbSe chalcogenide glass waveguides using electron-beam lithography followed by plasma dry etching. A microring resonator with a radius of 90 μm shows an intrinsic Q factor of 4.1 × 10 in the telecom band. Thanks to the submicron waveguide dimension, the effective nonlinear coefficient was determined to be up to ∼110 Wm at 1550 nm, yielding a larger figure-of-merit compared with previously reported submicron chalcogenide waveguides. Such a high Q factor, combined with the large nonlinear coefficient and high confinement, shows the great potential of the GeSbSe microring resonator as a competitive platform in integrated nonlinear photonics.
我们通过电子束光刻和等离子体干法刻蚀，在高折射率对比度的锗锑硒硫系玻璃波导中展示了高品质（Q）因子微环谐振器。一个半径为90μm的微环谐振器在电信波段显示出4.1×10的本征Q因子。由于波导尺寸为亚微米级，在1550nm处测得的有效非线性系数高达约110W/m，与先前报道的亚微米硫系波导相比，其品质因数更大。如此高的Q因子，再加上大的非线性系数和高限制，表明锗锑硒微环谐振器作为集成非线性光子学中一个有竞争力的平台具有巨大潜力。
