Liu Manwen, Li Xinqing, Cheng Wenzheng, Li Zheng, Li Zhihua
Institute of Microelectronics, Chinese Academy of Sciences (IMECAS), Beijing 100029, China.
School of Physics and Optoelectronic Engineering, Ludong University, Yantai 264025, China.
Micromachines (Basel). 2021 Nov 14;12(11):1400. doi: 10.3390/mi12111400.
The radiation fluence of high luminosity LHC (HL-LHC) is predicted up to 1 × 10 1 MeV n/cm in the ATLAS and CMS experiments for the pixel detectors at the innermost layers. The increased radiation leads to the degradation of the detector properties, such as increased leakage current and full depletion voltage, and reduced signals and charge collection efficiency, which means it is necessary to develop the radiation hard semiconductor devices for very high luminosity colliders. In our previous study about ultra-fast 3D-trench electrode silicon detectors, through induced transient current simulation with different minimum ionizing particle (MIP) hitting positions, the ultra-fast response times ranging from 30 ps to 140 ps were verified. In this work, the full depletion voltage, breakdown voltage, leakage current, capacitance, weighting field and MIP induced transient current (signal) of the detector after radiation at different fluences will be simulated and calculated with professional software, namely the finite-element Technology Computer-Aided Design (TCAD) software frameworks. From analysis of the simulation results, one can predict the performance of the detector in heavy radiation environment. The fabrication of pixel detectors will be carried out in CMOS process platform of IMECAS based on ultra-pure high resistivity (up to 10 ohm·cm) silicon material.
在ATLAS和CMS实验中，预测高亮度大型强子对撞机（HL-LHC）最内层像素探测器的辐射注量高达1×10¹¹ MeV n/cm² 。辐射的增加会导致探测器性能下降，如漏电流和全耗尽电压增加、信号和电荷收集效率降低，这意味着有必要为超高亮度对撞机开发抗辐射的半导体器件。在我们之前关于超快3D沟槽电极硅探测器的研究中，通过对不同最小电离粒子（MIP）撞击位置进行感应瞬态电流模拟，验证了30 ps至140 ps的超快响应时间。在这项工作中，将使用专业软件，即有限元技术计算机辅助设计（TCAD）软件框架，对探测器在不同注量辐射后的全耗尽电压、击穿电压、漏电流、电容、加权场和MIP感应瞬态电流（信号）进行模拟和计算。通过对模拟结果的分析，可以预测探测器在强辐射环境中的性能。像素探测器将基于超纯高电阻率（高达10 Ω·cm）硅材料，在中科院微电子所的CMOS工艺平台上制造。
