Liu Manwen, Zhou Tao, Li Zheng
Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
School of Materials Science and Engineering, Xiangtan University, Changsha 411109, China.
Micromachines (Basel). 2020 Jul 10;11(7):674. doi: 10.3390/mi11070674.
In our previous work on ultra-fast silicon detectors, extremely small carrier drift times of 50-100 picoseconds were predicted for electrode spacing of 5-10 μm. Expanding on these previous works, we systematically study the electrical characteristics of the ultra-fast, 3D-trench electrode silicon detector cell with p-type bulk silicon, such as electric potential distribution, electric field distribution, hole concentration distribution, and leakage current to analyze the full detector depletion voltage and other detector properties. To verify the prediction of ultra-fast response times, we simulate the instant induced current curves before and after irradiation with different minimum ionizing particle (MIP) hitting positions. High position resolution pixel detectors can be fabricated by constructing an array of these extremely small detector cells.
在我们之前关于超快硅探测器的工作中，对于5 - 10μm的电极间距，预测了50 - 100皮秒的极短载流子漂移时间。在这些先前工作的基础上，我们系统地研究了具有p型体硅的超快3D沟槽电极硅探测器单元的电学特性，如电势分布、电场分布、空穴浓度分布和漏电流，以分析整个探测器的耗尽电压及其他探测器特性。为了验证超快响应时间的预测，我们模拟了不同最小电离粒子（MIP）撞击位置照射前后的瞬态感应电流曲线。通过构建这些极小探测器单元的阵列，可以制造出高位置分辨率像素探测器。
