Bae Geun Yeol, Kim Jinsung, Kim Junyoung, Lee Siyoung, Lee Eunho
Green and Sustainable Materials R&D Development, Korea Institute of Industrial Technology (KITECH), Cheonan 31056, Korea.
Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Korea.
Nanomaterials (Basel). 2021 Oct 22;11(11):2805. doi: 10.3390/nano11112805.
Due to their extraordinary electrical and physical properties, two-dimensional (2D) transition metal dichalcogenides (TMDs) are considered promising for use in next-generation electrical devices. However, the application of TMD-based devices is limited because of the Schottky barrier interface resulting from the absence of dangling bonds on the TMDs' surface. Here, we introduce a facile phase-tuning approach for forming a homogenous interface between semiconducting hexagonal (2H) and semi-metallic monoclinic (1T') molybdenum ditelluride (MoTe). The formation of ohmic contacts increases the charge carrier mobility of MoTe field-effect transistor devices to 16.1 cm Vs with high reproducibility, while maintaining a high on/off current ratio by efficiently improving charge injection at the interface. The proposed method enables a simple fabrication process, local patterning, and large-area scaling for the creation of high-performance 2D electronic devices.
由于其非凡的电学和物理性质，二维（2D）过渡金属二硫属化物（TMD）被认为在下一代电子器件中具有应用前景。然而，基于TMD的器件的应用受到限制，因为TMD表面不存在悬空键导致了肖特基势垒界面。在此，我们引入一种简便的相调谐方法，以在半导体六方（2H）和半金属单斜（1T'）二碲化钼（MoTe₂）之间形成均匀界面。欧姆接触的形成将MoTe₂场效应晶体管器件的电荷载流子迁移率提高到16.1 cm² V⁻¹ s⁻¹，具有高重现性，同时通过有效改善界面处的电荷注入保持高的开/关电流比。所提出的方法能够实现简单的制造工艺、局部图案化以及大面积缩放，以制造高性能的二维电子器件。
