Echresh Ahmad, Arora Himani, Fuchs Florian, Li Zichao, Hübner René, Prucnal Slawomir, Schuster Jörg, Zahn Peter, Helm Manfred, Zhou Shengqiang, Erbe Artur, Rebohle Lars, Georgiev Yordan M
Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), 01328 Dresden, Germany.
International Helmholtz Research School for Nanoelectronic Network, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), 01328 Dresden, Germany.
Nanomaterials (Basel). 2021 Oct 30;11(11):2917. doi: 10.3390/nano11112917.
The fabrication of individual nanowire-based devices and their comprehensive electrical characterization remains a major challenge. Here, we present a symmetric Hall bar configuration for highly p-type germanium nanowires (GeNWs), fabricated by a top-down approach using electron beam lithography and inductively coupled plasma reactive ion etching. The configuration allows two equivalent measurement sets to check the homogeneity of GeNWs in terms of resistivity and the Hall coefficient. The highest Hall mobility and carrier concentration of GeNWs at 5 K were in the order of 100 cm2/(Vs) and 4×1019cm-3, respectively. With a decreasing nanowire width, the resistivity increases and the carrier concentration decreases, which is attributed to carrier scattering in the region near the surface. By comparing the measured data with simulations, one can conclude the existence of a depletion region, which decreases the effective cross-section of GeNWs. Moreover, the resistivity of thin GeNWs is strongly influenced by the cross-sectional shape.
制造基于单个纳米线的器件及其全面的电学表征仍然是一项重大挑战。在此，我们展示了一种用于高p型锗纳米线（GeNWs）的对称霍尔条形结构，该结构通过使用电子束光刻和电感耦合等离子体反应离子蚀刻的自上而下方法制造。这种结构允许进行两组等效测量，以检查GeNWs在电阻率和霍尔系数方面的均匀性。在5 K时，GeNWs的最高霍尔迁移率和载流子浓度分别约为100 cm2/(Vs)和4×1019cm-3。随着纳米线宽度的减小，电阻率增加而载流子浓度降低，这归因于表面附近区域的载流子散射。通过将测量数据与模拟结果进行比较，可以得出存在耗尽区的结论，该耗尽区减小了GeNWs的有效横截面。此外，细GeNWs的电阻率受到横截面形状的强烈影响。
