Jang Hyeon-Sik, Kim Tae-Hoon, Kim Byeong Geun, Hou Bo, Lee In-Hwan, Jung Su-Ho, Lee Jae-Hyun, Cha SeungNam, Yang Cheol-Woong, Kim Byung-Sung, Whang Dongmok
School of Advanced Materials Science and Engineering and SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon 16419, Korea.
Department of Materials Science and Engineering, Chonnam National University, Gwangju 61186, Republic of Korea.
Nano Lett. 2021 Dec 8;21(23):9909-9915. doi: 10.1021/acs.nanolett.1c02982. Epub 2021 Nov 29.
While the orientation-dependent properties of semiconductor nanowires have been theoretically predicted, their study has long been overlooked in many fields owing to the limits to controlling the crystallographic growth direction of nanowires (NWs). We present here the orientation-controlled growth of single-crystalline germanium (Ge) NWs using a self-catalytic low-pressure chemical vapor deposition process. By adjusting the growth temperature, the orientation of growth direction in GeNWs was selectively controlled to the ⟨110⟩, ⟨112⟩, or ⟨111⟩ directions on the same substrate. The NWs with different growth directions exhibit distinct morphological features, allowing control of the NW morphology from uniform NWs to nanoribbon structures. Significantly, the VLS-based self-catalytic growth of the ⟨111⟩ oriented GeNW suggests that NW growth is possible for single elementary materials even without an appropriate external catalyst. Furthermore, these findings could provide opportunities to investigate the orientation-dependent properties of semiconductor NWs.
虽然半导体纳米线的取向相关特性已在理论上得到预测，但由于在控制纳米线（NWs）晶体生长方向方面存在限制，其研究在许多领域长期被忽视。我们在此展示了使用自催化低压化学气相沉积工艺对单晶锗（Ge）纳米线进行取向控制生长的方法。通过调节生长温度，在同一衬底上，GeNWs的生长方向取向被选择性地控制为⟨110⟩、⟨112⟩或⟨111⟩方向。具有不同生长方向的纳米线呈现出不同的形态特征，从而能够将纳米线形态从均匀的纳米线控制为纳米带结构。值得注意的是，基于VLS的⟨111⟩取向GeNW的自催化生长表明，即使没有合适的外部催化剂，单一元素材料的纳米线生长也是可能的。此外，这些发现可能为研究半导体纳米线的取向相关特性提供机会。
