Kim Byung-Sung, Lee Jae-Hyun, Son Kiseok, Hwang Sung Woo, Choi Byoung Lyong, Lee Eun Kyung, Whang Dongmok
Sungkyunkwan Advanced Institute of Nanotechnology and School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, Korea.
J Nanosci Nanotechnol. 2012 May;12(5):4103-7. doi: 10.1166/jnn.2012.6427.
The crystalline germanium nanowires (GeNWs) with a uniform graphitic carbon shell were prepared via a conventional low-pressure chemical vapor deposition method without any external catalyst. The GeNWs grown at low temperature (Tg < 500 degrees C) have a uniform diameter with a large expect ratio of more than 10(3). With increasing the growth temperature (Tg > 500 degrees C), however, the nanowire morphology is dramatically changed into a hybrid structure where highly dense Ge nanoparticles (GeNPs) with a diameter of 5-10 nm are attached onto the Ge nanowires. The nanostructures consist of crystalline Ge-core and very thin graphitic carbon shell. The possible mechanism of anisotropic growth and the control of morphological transition from uniform nanowires to NW/NP hybrid structures are discussed and demonstrated.
采用传统的低压化学气相沉积法，在无任何外部催化剂的情况下制备了具有均匀石墨碳壳的结晶锗纳米线（GeNWs）。在低温（Tg < 500℃）下生长的GeNWs具有均匀的直径，长径比大于10³。然而，随着生长温度的升高（Tg > 500℃），纳米线形态急剧转变为一种混合结构，其中直径为5 - 10nm的高密度锗纳米颗粒（GeNPs）附着在锗纳米线上。这些纳米结构由结晶锗核和非常薄的石墨碳壳组成。讨论并论证了各向异性生长的可能机制以及从均匀纳米线到NW/NP混合结构的形态转变控制。
