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多孔硅中的蒸发过程:空化与孔隙堵塞

Evaporation Process in Porous Silicon: Cavitation vs Pore Blocking.

作者信息

Bossert Marine, Grosman Annie, Trimaille Isabelle, Souris Fabien, Doebele Victor, Benoit-Gonin Aristée, Cagnon Laurent, Spathis Panayotis, Wolf Pierre-Etienne, Rolley Etienne

机构信息

Institut des NanoSciences de Paris, INSP, Sorbonne Université, CNRS, F-75005 Paris, France.

Institut Néel, Université Grenoble Alpes, CNRS, F-38042 Grenoble, France.

出版信息

Langmuir. 2021 Dec 14;37(49):14419-14428. doi: 10.1021/acs.langmuir.1c02397. Epub 2021 Nov 29.

Abstract

We measured sorption isotherms for helium and nitrogen in wide temperature ranges and for a series of porous silicon samples, both native samples and samples with reduced pore mouth, so that the pores have an ink-bottle shape. Combining volumetric measurements and sensitive optical techniques, we show that, at a high temperature, homogeneous cavitation is the relevant evaporation mechanism for all samples. At a low temperature, the evaporation is controlled by meniscus recession, the detailed mechanism being dependent on the pore length and mouth reduction. Native samples and samples with ink-bottle pores shorter than 1 μm behave as an array of independent pores. In contrast, samples with long ink-bottle pores exhibit long-range correlations between pores. In this latter case, evaporation takes place by a collective percolation process and not by heterogeneous cavitation as previously proposed. The variety of evaporation mechanisms points to porous silicon being an anisotropic three-dimensional pore network rather than an array of straight independent pores.

摘要

我们在很宽的温度范围内测量了一系列多孔硅样品(包括原生样品和孔口缩小从而使孔呈墨水瓶形状的样品)对氦气和氮气的吸附等温线。通过结合体积测量和灵敏的光学技术,我们表明,在高温下,均匀空化是所有样品的相关蒸发机制。在低温下,蒸发由弯月面后退控制,具体机制取决于孔的长度和孔口缩小情况。原生样品和墨水瓶孔短于1μm的样品表现为一系列独立的孔。相比之下,具有长墨水瓶孔的样品在孔之间表现出长程相关性。在后一种情况下,蒸发通过集体渗流过程发生,而不是如先前提出的那样通过非均匀空化发生。多种蒸发机制表明多孔硅是一个各向异性的三维孔网络,而不是一系列笔直的独立孔。

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