Kim Byunguk, Choi Yeonsik, Lee Dahyun, Cheon Seonghak, Byun Younghun, Jeon Hyeongtag
Department of Nanoscale Semiconductor Engineering, Hanyang University, Seoul 133-791, Republic of Korea.
Mecaro Advanced Precursor System R&D Center, 261 Weonnamsandan-ro, Republic of Korea.
Nanotechnology. 2021 Dec 22;33(11). doi: 10.1088/1361-6528/ac40c2.
We study the rutile-TiOfilm deposition with a high-value using a SnOseed layer and a low temperature heat treatment. Generally, heat treatment over 600 °C is required to obtain the rutile-TiOfilm. However, By using a SnOseed layer, we obtained rutile-TiOfilms with heat treatments as low as 400 °C. The XPS analysis confirms that the SnOand TiOfilm were deposited. The XRD analysis showed that a heat treatment at 400 °C after depositing the SnOand TiOfilms was effective in obtaining the rutile-TiOfilm when the SnOfilm was thicker than 10 nm. The TEM/EDX analysis show that no diffusion in the thin film between TiOand SnO. The dielectric constant of the TiOfilm deposited on the SnOfilm (20 nm) was 67, which was more than twice as high as anatase TiOdielectric constant (Anatase TiOdielectric constant : 15-40). The current density was 10A cmat 0.7 V and this value confirmed that the leakage current was not affected by the SnOseed layer.
我们使用SnO籽晶层和低温热处理来研究高价值的金红石型TiO薄膜沉积。一般来说，要获得金红石型TiO薄膜需要600℃以上的热处理。然而，通过使用SnO籽晶层，我们在低至400℃的热处理下获得了金红石型TiO薄膜。XPS分析证实了SnO和TiO薄膜已沉积。XRD分析表明，当SnO薄膜厚度大于10nm时，在沉积SnO和TiO薄膜后于400℃进行热处理对于获得金红石型TiO薄膜是有效的。TEM/EDX分析表明，TiO和SnO之间的薄膜中没有扩散现象。沉积在SnO薄膜（20nm）上的TiO薄膜的介电常数为67，这比锐钛矿型TiO的介电常数（锐钛矿型TiO介电常数：15 - 40）高出两倍多。电流密度在0.7V时为10A/cm²，该值证实了泄漏电流不受SnO籽晶层的影响。
