Zheng R, Yan M Y, Li C, Yin S Q, Chen W D, Gao G Y, Yan J M, Chai Y
School of Physics and Materials Science, Guangzhou University, Guangzhou 510006, China.
National Laboratory of Solid State Microstructures, College of Engineering and Applied Science & Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China.
Nanoscale. 2021 Dec 16;13(48):20657-20662. doi: 10.1039/d1nr06863f.
The responses of material properties to multi-field stimulation are often exploited to construct new types of multi-functional devices. Here, we demonstrate electrical, optical and thermal modulation of the electronic properties of optothermal ferroelectric field-effect transistors (FeFETs) which are fabricated by growing BiTe films on (111)-oriented 0.71Pb(MgNb)O-0.29PbTiO (PMN-PT) ferroelectric single-crystal substrates. Using the electric field to switch the polarization direction of PMN-PT, the carrier density and resistance of BiTe films are , reversibly, and nonvolatilely modulated the ferroelectric field effect. Moreover, through infrared light illumination on the bottom of PMN-PT substrates, the resistance of BiTe films in two polarization states could be further modulated, which is ascribed to the decreased polarization intensity at higher temperature due to the pyroelectric effect. Taking advantage of these two effects, the BiTe/PMN-PT optothermal FeFETs exhibit multiple responses to optical and electric field stimulation at room temperature. Our work provides a strategy to design optoelectronic devices with both photodetector and memory functionalities.
材料特性对多场刺激的响应常常被用于构建新型多功能器件。在此，我们展示了光热铁电场效应晶体管（FeFETs）电子特性的电学、光学和热学调制，该晶体管是通过在（111）取向的0.71Pb（MgNb）O - 0.29PbTiO（PMN - PT）铁电单晶衬底上生长BiTe薄膜制备而成。利用电场切换PMN - PT的极化方向，BiTe薄膜的载流子密度和电阻通过铁电场效应被可逆且非易失性地调制。此外，通过在PMN - PT衬底底部进行红外光照射，处于两种极化状态的BiTe薄膜的电阻可被进一步调制，这归因于热释电效应导致高温下极化强度降低。利用这两种效应，BiTe/PMN - PT光热FeFETs在室温下对光和电场刺激表现出多种响应。我们的工作为设计兼具光电探测器和存储功能的光电器件提供了一种策略。
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