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具有用于光刻图案化应用的可调节功能化位点的类方铁锰矿分子铟氧簇。

Molecular bixbyite-like In-oxo clusters with tunable functionalization sites for lithography patterning applications.

作者信息

Yi Xiaofeng, Wang Di, Li Fan, Zhang Jian, Zhang Lei

机构信息

State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences Fuzhou Fujian 350002 P. R. China

University of Chinese Academy of Sciences Beijing 100049 P. R. China.

出版信息

Chem Sci. 2021 Sep 22;12(43):14414-14419. doi: 10.1039/d1sc04491e. eCollection 2021 Nov 10.

DOI:10.1039/d1sc04491e
PMID:34880992
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8580043/
Abstract

Indium oxides have been widely applied in many technological areas, but their utilization in lithography has not been developed. Herein, we illustrated a family of unprecedented In-oxo clusters with a general formula [In(μ-O)(μ-OH)(OCHCHNHCHCHO)(OR)X]X (where X = Cl or Br; R = CH, CHNO or CHF), which not only present the largest size record in the family of indium-oxo clusters (InOCs), but also feature the first molecular model of bixbyite-type InO. Moreover, through the labile coordination sites of the robust diethanolamine-stabilized In-oxo core, these InOCs can be accurately functionalized with different halides and alcohol or phenol derivatives, producing tunable solubility. Based on the high solution stability as confirmed by ESI-MS analysis, homogeneous films can be fabricated using these In-oxo clusters by the spin-coating method, which can be further used for electron beam lithography (EBL) patterning studies. Accordingly, the above structural regulations have significantly influenced their corresponding film quality and patterning performance, with bromide or -nitrophenol functionalized In-oxo clusters displaying better performance of sub-50 nm lines. Thus, the here developed bixbyite-type In-oxo cluster starts the research on indium-based patterning materials and provides a new platform for future lithography radiation mechanism studies.

摘要

氧化铟已在许多技术领域中得到广泛应用,但其在光刻技术中的应用尚未得到开发。在此,我们展示了一系列前所未有的铟氧簇,其通式为[In(μ-O)(μ-OH)(OCHCHNHCHCHO)(OR)X]X(其中X = Cl或Br;R = CH、CHNO或CHF),这些簇不仅在铟氧簇(InOCs)家族中创下了最大尺寸记录,还具有方铁锰矿型InO的首个分子模型。此外,通过具有强稳定性的二乙醇胺稳定的铟氧核心的不稳定配位位点,这些InOCs可以用不同的卤化物以及醇或酚衍生物进行精确官能化,从而产生可调节的溶解度。基于电喷雾电离质谱(ESI-MS)分析所证实的高溶液稳定性,可以通过旋涂法使用这些铟氧簇制备均匀的薄膜,这些薄膜可进一步用于电子束光刻(EBL)图案化研究。因此,上述结构规则对它们相应的薄膜质量和图案化性能产生了显著影响,其中溴化物或对硝基苯酚官能化的铟氧簇在亚50纳米线条方面表现出更好的性能。因此,此处开发的方铁锰矿型铟氧簇开启了基于铟的图案化材料的研究,并为未来光刻辐射机制研究提供了一个新平台。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9741/8580043/5d55ac6f068e/d1sc04491e-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9741/8580043/1afadf913db8/d1sc04491e-s1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9741/8580043/49da49b3a7ca/d1sc04491e-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9741/8580043/f9ddd3f68a90/d1sc04491e-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9741/8580043/f9d60a57df5f/d1sc04491e-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9741/8580043/5d55ac6f068e/d1sc04491e-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9741/8580043/1afadf913db8/d1sc04491e-s1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9741/8580043/49da49b3a7ca/d1sc04491e-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9741/8580043/f9ddd3f68a90/d1sc04491e-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9741/8580043/f9d60a57df5f/d1sc04491e-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9741/8580043/5d55ac6f068e/d1sc04491e-f4.jpg

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