Chen Chen, Wang Xiao, Li Zhipeng, Du Xiaofan, Shao Zhipeng, Sun Xiuhong, Liu Dachang, Gao Caiyun, Hao Lianzheng, Zhao Qiangqiang, Zhang Bingqian, Cui Guanglei, Pang Shuping
Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao, 266101, P. R. China.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China.
Angew Chem Int Ed Engl. 2022 Feb 14;61(8):e202113932. doi: 10.1002/anie.202113932. Epub 2021 Dec 30.
In solution-processed organic-inorganic halide perovskite films, halide-anion related defects including halide vacancies and interstitial defects can easily form at the surfaces and grain boundaries. The uncoordinated lead cations produce defect levels within the band gap, and the excess iodides disturb the interfacial carrier transport. Thus these defects lead to severe nonradiative recombination, hysteresis, and large energy loss in the device. Herein, polyacrylonitrile (PAN) was introduced to passivate the uncoordinated lead cations in the perovskite films. The coordinating ability of cyano group was found to be stronger than that of the normally used carbonyl groups, and the strong coordination could reduce the I/Pb ratio at the film surface. With the PAN perovskite film, the device efficiency improved from 21.58 % to 23.71 % and the open-circuit voltage from 1.12 V to 1.23 V, the ion migration activation energy increased, and operational stability improved.
在溶液处理的有机-无机卤化物钙钛矿薄膜中,包括卤化物空位和间隙缺陷在内的卤化物阴离子相关缺陷很容易在表面和晶界处形成。未配位的铅阳离子在带隙内产生缺陷能级,过量的碘化物会干扰界面载流子传输。因此,这些缺陷会导致器件中严重的非辐射复合、滞后现象和大量能量损失。在此,引入聚丙烯腈(PAN)来钝化钙钛矿薄膜中未配位的铅阳离子。发现氰基的配位能力比常用的羰基更强,并且这种强配位可以降低薄膜表面的I/Pb比。使用PAN钙钛矿薄膜后,器件效率从21.58%提高到23.71%,开路电压从1.12 V提高到1.23 V,离子迁移活化能增加,操作稳定性得到改善。