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一维硒化钒(VSe)单层和纳米带系统的载流子迁移率:密度泛函理论研究。

Carrier mobility of one-dimensional vanadium selenide (VSe) monolayer and nanoribbon systems: DFT study.

作者信息

Lee Junho, Chung You Kyoung, Sung Dongchul, Jeong Byung Joo, Oh Seungbae, Choi Jae-Young, Huh Joonsuk

机构信息

Department of Chemistry, Sungkyunkwan University, Suwon 16419, Republic of Korea.

SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea.

出版信息

Nanotechnology. 2022 Jan 5;33(13). doi: 10.1088/1361-6528/ac4288.

Abstract

Vanadium selenide (VSe) is a true one-dimensional (1D) crystal composed of atomic nanochains bonded by van der Waals (vdW) interactions. Recent experiments revealed the mechanical exfoliation of newly synthesized VSe. In this study, we predicted the electronic and transport properties of VSethrough computational analyses. We calculated the intrinsic carrier mobility of VSemonolayers (MLs) and nanoribbons (NRs) using density functional theory and deformation potential theory. We found that the electron mobility of the two-dimensional (2D) (010)-plane ML of VSeis highly anisotropic, reachingμ2D,ze=1327cmVsacross the chain direction. The electron mobility of 1D NR systems in a (010)-plane ML of VSealong the chain direction continuously increased as the thickness increased from 1-chain to 4-chain NR (width below 3 nm). Interestingly, the electron mobility of 1D 4-chain NR along the chain direction (μ1D,xe=775cmVs) was higher than that of a 2D (010)-plane ML (μ2D,xe=567cmVs). These results demonstrate the potential of vdW-1D crystal VSeas a new nanomaterial for ultranarrow (sub-3 nm width) optoelectronic devices with high electron mobility.

摘要

硒化钒(VSe)是一种真正的一维(1D)晶体,由通过范德华(vdW)相互作用键合的原子纳米链组成。最近的实验揭示了新合成的VSe的机械剥离。在本研究中,我们通过计算分析预测了VSe的电子和输运性质。我们使用密度泛函理论和形变势理论计算了VSe单层(MLs)和纳米带(NRs)的本征载流子迁移率。我们发现,VSe的二维(2D)(010)平面ML的电子迁移率具有高度各向异性,在链方向上达到μ2D,ze = 1327 cmV/s。随着厚度从1链增加到4链NR(宽度低于3 nm),VSe的(010)平面ML中1D NR系统沿链方向的电子迁移率持续增加。有趣的是,1D 4链NR沿链方向的电子迁移率(μ1D,xe = 775 cmV/s)高于2D(010)平面ML的电子迁移率(μ2D,xe = 567 cmV/s)。这些结果证明了范德华1D晶体VSe作为具有高电子迁移率的超窄(宽度小于3 nm)光电器件新型纳米材料的潜力。

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