A grease for domain walls motion in HfO-based ferroelectrics.

A large coercive fieldof HfObased ferroelectric devices poses critical performance issues in their applications as ferroelectric memories and ferroelectric field effect transistors. A new design to reduceby fabricating nanolaminate HfZrO/ZrO(HZZ) thin films is used, followed by an ensuing annealing process at a comparatively high temperature 700 °C. High-resolution electron microscopy imaging detects tetragonal-like domain walls between orthorhombic polar regions. These walls decrease the potential barrier of polarization reversal in HfObased films compared to the conventional domain walls with a single non-polar spacer, causing about a 40% decrease in. Capacitance versus electric field measurements on HZZ thin film uncovered a substantial increase of dielectric permittivity near thecompared to the conventional HfZrOthin film, justifying the higher mobility of domain walls in the developed HZZ film. The tetragonal-like regions served as grease easing the movement of the domain wall and reducing.