Jang Hanhwi, Abbey Stanley, Frimpong Brakowaa, Nguyen Chien Viet, Ziolkowski Pawel, Oppitz Gregor, Kim Moohyun, Song Jae Yong, Shin Ho Sun, Jung Yeon Sik, Oh Min-Wook
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea.
Department of Materials Science and Engineering, Hanbat National University, Daejeon 34158, Republic of Korea.
ACS Appl Mater Interfaces. 2022 Jan 12;14(1):1270-1279. doi: 10.1021/acsami.1c23351. Epub 2022 Jan 3.
Charge carrier transport and corresponding thermoelectric properties are often affected by several parameters, necessitating a thorough comparative study for a profound understanding of the detailed conduction mechanism. Here, as a model system, we compare the electronic transport properties of two layered semiconductors, SbSiTe and BiSiTe. Both materials have similar grain sizes and morphologies, yet their conduction characteristics are significantly different. We found that phase boundary scattering can be one of the main factors for BiSiTe to experience significant charge carrier scattering, whereas SbSiTe is relatively unaffected by the phenomenon. Furthermore, extensive point defect scattering in SbSiTe significantly reduces its lattice thermal conductivity and results in high values across a broad temperature range. These findings provide novel insights into electron transport within these materials and should lead to strategies for further improving their thermoelectric performance.
电荷载流子传输及相应的热电性质常常受到几个参数的影响，因此需要进行全面的比较研究，以便深入了解详细的传导机制。在此，作为一个模型系统，我们比较了两种层状半导体SbSiTe和BiSiTe的电子输运性质。这两种材料具有相似的晶粒尺寸和形态，但其传导特性却显著不同。我们发现，相界散射可能是BiSiTe经历显著电荷载流子散射的主要因素之一，而SbSiTe相对不受该现象的影响。此外，SbSiTe中广泛存在的点缺陷散射显著降低了其晶格热导率，并在很宽的温度范围内导致较高的值。这些发现为这些材料中的电子输运提供了新的见解，并应能为进一步提高其热电性能带来策略。
