Comparative Study of Thermoelectric Properties of SbSiTe and BiSiTe.

Charge carrier transport and corresponding thermoelectric properties are often affected by several parameters, necessitating a thorough comparative study for a profound understanding of the detailed conduction mechanism. Here, as a model system, we compare the electronic transport properties of two layered semiconductors, SbSiTe and BiSiTe. Both materials have similar grain sizes and morphologies, yet their conduction characteristics are significantly different. We found that phase boundary scattering can be one of the main factors for BiSiTe to experience significant charge carrier scattering, whereas SbSiTe is relatively unaffected by the phenomenon. Furthermore, extensive point defect scattering in SbSiTe significantly reduces its lattice thermal conductivity and results in high values across a broad temperature range. These findings provide novel insights into electron transport within these materials and should lead to strategies for further improving their thermoelectric performance.