Wu Yangjiang, Wang Zhihui, Yang Longfei, Qiao Yanjun, Chang Dongdong, Yan Yongkun, Wu Zeng, Hu Zhijun, Zhang Jichao, Lu Xuefeng, Zhao Yan, Liu Yunqi
Department of Materials Science, Fudan University, Shanghai 200433, China.
Center for Soft Condensed Matter Physics and Interdisciplinary Research, Soochow University, Suzhou 215006, China.
ACS Appl Mater Interfaces. 2022 Jan 19;14(2):3095-3102. doi: 10.1021/acsami.1c20672. Epub 2022 Jan 5.
Traps play crucial roles in the charge transport of disordered organic semiconductors and can significantly influence the electrical performance of organic functional devices. The constrain effect of charge traps in organic field-effect transistors with a ferroelectric polymer as a dielectric interfacial layer has been studied at temperatures ranging from 30 °C to temperature beyond the Curie point of the ferroelectric polymers by utilizing a thermally stable polymer as the semiconducting channel. It has been observed that the charge traps are constrained within a shallow energy level with the ferroelectric interfacial layer. The change in the density of traps involved in the trap-filling process at temperatures across the Curie point shows that the decrease in shallow traps is almost proportional to the increase in deep traps, indicating the transition between shallow and deep traps in the semiconducting channel. These findings suggest potential in stability increase and performance enhancement of future organic functional devices via modulation of traps by a ferroelectric interfacial layer.
陷阱在无序有机半导体的电荷传输中起着关键作用，并且会显著影响有机功能器件的电学性能。通过使用热稳定聚合物作为半导体通道，研究了在30℃至高于铁电聚合物居里点的温度范围内，以铁电聚合物作为介电界面层的有机场效应晶体管中电荷陷阱的约束效应。据观察，电荷陷阱被限制在铁电界面层的浅能级内。在跨越居里点的温度下，陷阱填充过程中涉及的陷阱密度变化表明，浅陷阱的减少几乎与深陷阱的增加成正比，这表明半导体通道中浅陷阱和深陷阱之间的转变。这些发现表明，通过铁电界面层调制陷阱，未来有机功能器件在提高稳定性和增强性能方面具有潜力。
