新型聚吲哚薄膜的光电导性

Photoconductivity of Thin Films Obtained from a New Type of Polyindole.

作者信息

Salikhov Renat B, Mustafin Akhat G, Mullagaliev Ilnur N, Salikhov Timur R, Andriianova Anastasiia N, Latypova Lyaysan R, Sharafullin Ildus F

机构信息

Institute of Physics and Technology, Bashkir State University, Zaki Validi St. 32, 450076 Ufa, Russia.

Faculty of Chemistry, Bashkir State University, Zaki Validi St. 32, 450076 Ufa, Russia.

出版信息

Materials (Basel). 2021 Dec 29;15(1):228. doi: 10.3390/ma15010228.

DOI:10.3390/ma15010228

PMID:35009374

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8746277/

Abstract

The optoelectronic properties of a new poly(2-ethyl-3-methylindole) (MPIn) are discussed in this paper. The absorption and photoluminescence spectra were studied. The electronic spectrum of MPIn showed a single absorption maximum at 269 nm that is characteristic of the entire series of polyindoles. The fluorescence spectra show that the emission peaks of the test sample are centered around 520 nm. The photoconductivity of thin film samples of MPIn polyindole was studied by measuring the current-voltage characteristics under ultraviolet radiation with a wavelength of 350 nm. Samples of phototransistors were obtained, where thin films of MPIn polyindole were used as a transport layer, and their characteristics were measured and analyzed. The value of the quantum efficiency and the values of the mobility of charge carriers in thin polyindole films were estimated.

摘要

本文讨论了一种新型聚（2-乙基-3-甲基吲哚）（MPIn）的光电特性。研究了其吸收光谱和光致发光光谱。MPIn的电子光谱在269nm处显示出一个单一的吸收最大值，这是整个聚吲哚系列的特征。荧光光谱表明，测试样品的发射峰集中在520nm左右。通过测量波长为350nm的紫外辐射下的电流-电压特性，研究了MPIn聚吲哚薄膜样品的光电导性。制备了光晶体管样品，其中MPIn聚吲哚薄膜用作传输层，并对其特性进行了测量和分析。估算了聚吲哚薄膜中的量子效率值和电荷载流子迁移率值。