Cadatal-Raduban Marilou, Kato Tomoki, Horiuchi Yusuke, Olejníček Jiří, Kohout Michal, Yamanoi Kohei, Ono Shingo
Centre for Theoretical Chemistry and Physics, School of Natural and Computational Sciences, Massey University, Auckland 0632, New Zealand.
Institute of Laser Engineering, Osaka University, 2-6 Yamadaoka, Suita 565-0871, Osaka, Japan.
Nanomaterials (Basel). 2021 Dec 21;12(1):10. doi: 10.3390/nano12010010.
Vacuum ultraviolet radiation (VUV, from 100 nm to 200 nm wavelength) is indispensable in many applications, but its detection is still challenging. We report the development of a VUV photoconductive detector, based on titanium dioxide (TiO) nanoparticle thin films. The effect of crystallinity, optical quality, and crystallite size due to film thickness (80 nm, 500 nm, 1000 nm) and type of substrate (silicon Si, quartz SiO, soda lime glass SLG) was investigated to explore ways of enhancing the photoconductivity of the detector. The TiO film deposited on SiO substrate with a film thickness of 80 nm exhibited the best photoconductivity, with a photocurrent of 5.35 milli-Amperes and a photosensitivity of 99.99% for a bias voltage of 70 V. The wavelength response of the detector can be adjusted by changing the thickness of the film as the cut-off shifts to a longer wavelength, as the film becomes thicker. The response time of the TiO detector is about 5.8 μs and is comparable to the 5.4 μs response time of a diamond UV sensor. The development of the TiO nanoparticle thin film detector is expected to contribute to the enhancement of the use of VUV radiation in an increasing number of important technological and scientific applications.
真空紫外辐射(VUV,波长从100纳米到200纳米)在许多应用中不可或缺,但其检测仍然具有挑战性。我们报告了一种基于二氧化钛(TiO₂)纳米颗粒薄膜的VUV光电导探测器的研发情况。研究了由于薄膜厚度(80纳米、500纳米、1000纳米)和衬底类型(硅Si、石英SiO₂、钠钙玻璃SLG)导致的结晶度、光学质量和微晶尺寸的影响,以探索提高探测器光电导率的方法。沉积在SiO₂衬底上、厚度为80纳米的TiO₂薄膜表现出最佳的光电导率,在70伏偏置电压下光电流为5.35毫安,光敏度为99.99%。随着薄膜变厚,截止波长向更长波长移动,通过改变薄膜厚度可以调节探测器的波长响应。TiO₂探测器的响应时间约为5.8微秒,与金刚石紫外传感器5.4微秒的响应时间相当。预计TiO₂纳米颗粒薄膜探测器的研发将有助于在越来越多重要的技术和科学应用中增强VUV辐射的利用。