Li Jyun-Yi, Chang Sheng-Po, Hsu Ming-Hung, Chang Shoou-Jinn
Department of Electrical Engineering and Advanced Optoelectronic Technology Center, Institute of Microelectronics, National Cheng Kung University, Tainan 701, Taiwan.
Materials (Basel). 2017 Feb 4;10(2):126. doi: 10.3390/ma10020126.
We investigated the electrical and optoelectronic properties of a magnesium zinc oxide thin-film phototransistor. We fabricate an ultraviolet phototransistor by using a wide-bandgap MgZnO thin film as the active layer material of the thin film transistor (TFT). The fabricated device demonstrated a threshold voltage of 3.1 V, on-off current ratio of 10⁵, subthreshold swing of 0.8 V/decade, and mobility of 5 cm²/V·s in a dark environment. As a UV photodetector, the responsivity of the device was 3.12 A/W, and the rejection ratio was 6.55 × 10⁵ at a gate bias of -5 V under 290 nm illumination.
我们研究了镁锌氧化物薄膜光电晶体管的电学和光电特性。我们通过使用宽带隙MgZnO薄膜作为薄膜晶体管（TFT）的有源层材料来制造紫外光电晶体管。所制造的器件在黑暗环境中表现出3.1 V的阈值电压、10⁵的开/关电流比、0.8 V/十倍频程的亚阈值摆幅以及5 cm²/V·s的迁移率。作为紫外光电探测器，在290 nm光照下，该器件在栅极偏压为 -5 V时的响应度为3.12 A/W，抑制比为6.55×10⁵。
